Abstract:Solid-state detectors with a low energy threshold have several applications, including in direct-detection searches of non-relativistic halo dark-matter particles with sub-GeV masses. Moreover, when searching for relativistic or quasi-relativistic beyond-the-Standard-Model particles (i.e., $v/c\gtrsim 0.01$) that have an enhanced cross section for small energy transfers, a comparatively small detector with a low energy threshold may have better sensitivity than a larger detector with a higher energy threshold. In this paper, we provide accurate calculations of the low-energy ionization spectrum from high-velocity particles scattering in a dielectric material. We focus on silicon, although our results can be easily applied to other materials. We consider the full material response, in particular also the excitation of bulk plasmons. We generalize the energy-loss function to relativistic kinematics, and benchmark existing tools used for halo dark-matter scattering against publicly available electron energy-loss spectroscopy data. Compared to calculations of energy loss that are commonly used in the literature, such as the Photo-Absorption-Ionization model or the free-electron model, the inclusion of collective effects shifts the recoil ionization spectrum towards higher energies, typically peaking around 4--6 electron-hole pairs. We apply our results to the three benchmark examples: millicharged particles produced in a beam, neutrinos with a magnetic dipole moment produced in a reactor, and dark-matter particles that are upscattered by cosmic rays or in the Sun. Our results show that the proper inclusion of collective effects typically enhances a detector's sensitivity to these particles, since detector backgrounds, such as dark counts, peak at lower energies.

Defect recombination origin of low energy excess in semiconductor detectors

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Revisiting the Dark Matter Interpretation of Excess Rates in Semiconductors

Numerical Fitting of Transient Decays in the High Defect Density Limit

Extended Storage of Multiple Excitons in Trap States of Semiconductor Nanocrystals

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Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Identifying Defect-Related Quantum Emitters in Monolayer WSe2

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Collective excitations and low-energy ionization signatures of relativistic particles in silicon detectors

Coulomb Contribution to Shockley–Read–Hall Recombination

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Measurement of Low Energy Nuclear Recoil Events with the phonon-mediated Voltage-Assisted Hybrid Detector for Rare Event Searches

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Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

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Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy