Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

pn-junction delineation in Si devices using scanning capacitance spectroscopy

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Investigating Mesa Structure Impact on C-V Measurements

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Nanoscale Characterization of Resistive Switching Using Advanced Conductive Atomic Force Microscopy Based Setups

Development of 3C-SiC MOSFETs

Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis