Abstract:Single‐layer graphene microheaters are used to electro‐thermally switch the optical phase‐change material Ge2Sb2Se4Te1, with powers down to 8.6 mW. Nonvolatile tunable integrated photonic modulators and reconfigurable 2π phase‐modulation metasurfaces are proposed using 3D simulations and experimental data. This framework enables scalable nonvolatile photonic devices with microheaters that are compatible to all photonic platforms and do not disrupt their optical performances.Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcome these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on‐chip integration with different photonic platforms and do not disrupt their optical performances. Herein, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that uses undoped‐graphene microheaters to thermally and reversibly switch the optical phase‐change material Ge2Sb2Se4Te1 (GSST). An in situ Raman spectroscopy method is utilized to demonstrate, in real‐time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si3N4 integrated photonic circuits with small form‐factor modulators and reconfigurable metasurfaces displaying 2π phase coverage through neural‐network‐designed GSST meta‐atoms. This framework will enable scalable, low‐loss nonvolatile applications across a diverse range of photonics platforms.

Microheater hotspot engineering for repeatable multi-level switching in foundry-processed phase change silicon photonics

Ion Write Microthermotics: Programing Thermal Metamaterials at the Microscale

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Multi‐Level Electro‐Thermal Switching of Optical Phase‐Change Materials Using Graphene

The State-of-the-Art Phase-Change Integrated Photonic Devices With Electrically Driven Microheaters

Time-resolved temperature mapping leveraging the strong thermo-optic effect in phase-change devices

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

All-Optical Switching of Silicon Nanobeam Cavities with an Ultra-compact Heater Utilizing the Photothermal Effect

Thermally Switchable/tunable Photonic Integrated Devices on Silicon

Spatially Resolved Dynamically Reconfigurable Multilevel Control of Thermal Emission

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Nonvolatile plasmonics based on optically reprogrammable phase change materials

Thermally-Reconfigurable Silicon Photonic Devices and Circuits