Abstract:Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to reduce the low - frequency charge noise in Si/SiGe quantum dot devices through bias cooling technology, thereby improving the stability and performance of these devices. Specifically, researchers are concerned that in semiconductor quantum dot systems, especially in Si/SiGe heterostructures, long - term charge dynamics and changes during the cooling process have not been fully quantitatively studied. Low - frequency charge noise has an important impact on the operational stability of qubits, so reducing this noise is crucial for achieving a more stable quantum computing platform. ### Main problems 1. **Reduction of low - frequency charge noise**: - Researchers hope to reduce the low - frequency charge noise in the frequency range from 200 µHz to 10 mHz through the bias cooling method. 2. **Impact of bias cooling voltage**: - Explore the impact of different bias cooling voltages (\( V_{BC} \)) on charge noise and find the optimal bias cooling voltage to achieve the lowest noise level. 3. **Long - term stability and repeatability**: - Study the changes in noise levels during multiple cooling processes to verify the effectiveness and repeatability of the bias cooling method. ### Experimental design and results - **Experimental equipment**: Four different Si/SiGe quantum dot devices were used, and each device underwent more than 80 cooling cycles. - **Measurement method**: Peak - tracking measurements were carried out through single - electron transistors (SET) to record the low - frequency noise spectrum. - **Key findings**: - In all samples, when the bias cooling voltage was 0.7 V, the total noise power reached a minimum, being reduced by approximately 6 times. - For some samples (such as Sample B), when cooled at 0.75 V, the noise power was reduced by two orders of magnitude (120 times). - The Schrödinger - Poisson simulation was further used to verify the impact of bias cooling on the tunneling current, and the results showed that when cooled at 0.7 V, the tunneling current was reduced by seven orders of magnitude. ### Conclusion The bias cooling technology can significantly reduce the low - frequency charge noise in Si/SiGe quantum dot devices, especially when the bias cooling voltage is around 0.7 V, which has the best effect. This not only improves the stability of the device but also provides an important reference for the design of future quantum computing platforms. Through this research, the authors have demonstrated that bias cooling, as a simple and effective means, can significantly improve the performance of quantum dot devices on the basis of existing equipment, laying the foundation for the further development of solid - state quantum computers.

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