Abstract:Recent advancement in the switching of perpendicular magnetic tunnel junctions with an electric field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current spin-transfer torque-magnetic tunnel junction and spin–orbit torque-magnetic tunnel junction devices, the typical linear fJ/V m range voltage controlled magnetic anisotropy (VCMA) needs to be significantly enhanced with approaches that include new materials or stack engineering. A possible bidirectional and 1.1 pJ/V m VCMA effect has been predicted by using heavily electron-depleted Fe/MgO interfaces. To improve upon existing VCMA technology, we have proposed inserting high work function materials underneath the magnetic layer. This will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime, where the pJ/V m and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the Ta/Pd(x)/Ta underlayer's work function. By varying the Pd thickness (x) from 0 to 10 nm, we have observed a tunable change in the Ta layer's work function from 4.32 to 4.90 eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the underlayer, we have performed DFT calculations on supercells of Ta/Pd(x)/Ta/CoFe/MgO, which demonstrate that electron depletion will not be fully screened at the CoFe/MgO interface. Gated pillar devices with Hall cross geometries were fabricated and tested to extract the anisotropy change as a function of applied gate voltage for samples with various Pd thicknesses. The electron-depleted Pd samples show three to six times VCMA improvement compared to the electron accumulated Ta control sample.

Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect

Peculiarities of spin-orbit interaction systematically measured in FeCoB nanomagnets

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Peculiarities of spin–orbit interaction systematically measured in FeCoB nanomagnets

Modulation of Magnetic Anisotropy and Spin-Orbit Interaction by Electrical Current in FeCoB Nanomagnets

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Large Voltage Control of Magnetic Anisotropy in CoFeB/MgO/OX Structures at Room Temperature

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires

Strain-induced Polarity Switching of Magnetic Vortex in Fe1−xGax Alloys with Different Compositions

Spin current control of magnetism

Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Continuous Manipulation of Magnetic Anisotropy in a Van Der Waals Ferromagnet Via Electrical Gating

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Giant Magnetoresistance And Tunnel Magnetoresistance Effects In Fecogd-Based Spin Valves And Magnetic Tunnel Junctions

Geometric and Anisotropy Effects on Voltage Driven Magnetic Switching Behaviors in Nanoscale Multiferroic Heterostructure

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa

Magnetization dependent spin orbit torques generated by ferrimagnetic FeCoTb alloys