Abstract:Nanoparticles (NPs) have had increasingly successful applications including in emissive or photovoltaic devices; however, trap states associated with the surface of NPs often drastically reduce the efficiency of devices and are difficult to detect spectroscopically. We show the applicability of photoconduction as the means of detecting and quantifying trap states in NPs. We performed time-of-flight (ToF) photoconduction measurements, using semiconducting poly[bis(4-phenyl)(4-butyphenyl)amine] (P-TPD) doped with either core/shell CdSeS/CdS quantum dots (QDs) or perovskite CsPbBr3 NPs, both of which are carefully designed to be energetically matched. In the case of the QDs, a drop in the hole mobility from ∼10-3 to ∼10-4 cm2 V-1 s-1 was observed when compared to a control sample, suggesting the presence of a hole trapping. These trap states were found to be around -5.0 to -4.9 eV from the vacuum level. The presence of the trap states was further supported by a coincident reduction in the photoluminescence (PL), quantum yield (QY), and lifetime of the core/shell QDs after purification. Using the measured reductions in the PL, QY, and lifetime, the surface trap state density was estimated to increase by between 20 and 40%, most likely due to a ligand detachment. In the case of the perovskite NP-doped samples, a mobility of ∼10-3 cm2 V-1 s-1 was measured. Thus, doping with perovskite NPs did not generate any obvious hole trapping from the P-TPD matrix. The absence of a trapping may be related to the reduced surface-to-volume ratio and NP number density of the perovskite NPs compared to the core/shell QDs, since the perovskite NPs are approximately 10 times larger in radius than that of the core/shell QDs. Our results suggest that to minimize the presence of trap states with a view to improving device performance, large-size perovskite NPs appear to be better than small-size QDs.

Understanding Trap States in InP and GaP Quantum Dots Through Density Functional Theory

Understanding Trap States in InP and GaP Quantum Dots through Density Functional Theory

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

The influence of exposed surface on trap state of PbS quantum dots

Electron-Electron and Electron-Phonon Interactions in the Dynamics of Trap-Filling in Charged Quantum Dots

Trap Passivation in Indium-Based Quantum Dots through Surface Fluorination: Mechanism and Applications

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

Energetics of Nonradiative Surface Trap States in Nanoparticles Monitored by Time-of-Flight Photoconduction Measurements on Nanoparticle-Polymer Blends

Suppression of the hole trap for high-quality amino-phosphine based InP quantum dots

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Highly Luminescent Shell‐Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States

Controlling Nanogap Quantum Dot Photoconductivity through Optoelectronic Trap Manipulation

To Battle Surface Traps on CdSe/CdS Core/Shell Nanocrystals: Shell Isolation Versus Surface Treatment.

Surface Reconstructions in II-VI Quantum Dots

Exciton states and interband optical transitions in InGaN quantum dots

Hot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots

Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation

Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses

Coulomb Blockade and Resonant Tunnelling in Etched and Regrown Ga0.25in0.75as/Inp Quantum Dots

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

Trap States in Lead Iodide Perovskites.