Abstract:Nanoparticles (NPs) have had increasingly successful applications including in emissive or photovoltaic devices; however, trap states associated with the surface of NPs often drastically reduce the efficiency of devices and are difficult to detect spectroscopically. We show the applicability of photoconduction as the means of detecting and quantifying trap states in NPs. We performed time-of-flight (ToF) photoconduction measurements, using semiconducting poly[bis(4-phenyl)(4-butyphenyl)amine] (P-TPD) doped with either core/shell CdSeS/CdS quantum dots (QDs) or perovskite CsPbBr3 NPs, both of which are carefully designed to be energetically matched. In the case of the QDs, a drop in the hole mobility from ∼10-3 to ∼10-4 cm2 V-1 s-1 was observed when compared to a control sample, suggesting the presence of a hole trapping. These trap states were found to be around -5.0 to -4.9 eV from the vacuum level. The presence of the trap states was further supported by a coincident reduction in the photoluminescence (PL), quantum yield (QY), and lifetime of the core/shell QDs after purification. Using the measured reductions in the PL, QY, and lifetime, the surface trap state density was estimated to increase by between 20 and 40%, most likely due to a ligand detachment. In the case of the perovskite NP-doped samples, a mobility of ∼10-3 cm2 V-1 s-1 was measured. Thus, doping with perovskite NPs did not generate any obvious hole trapping from the P-TPD matrix. The absence of a trapping may be related to the reduced surface-to-volume ratio and NP number density of the perovskite NPs compared to the core/shell QDs, since the perovskite NPs are approximately 10 times larger in radius than that of the core/shell QDs. Our results suggest that to minimize the presence of trap states with a view to improving device performance, large-size perovskite NPs appear to be better than small-size QDs.

The influence of exposed surface on trap state of PbS quantum dots

Effects of Surface Polarization on the Bandgap and the Absorption-Peak Wavelength of Quantum Dot at Room Temperature

Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy.

To Battle Surface Traps on CdSe/CdS Core/Shell Nanocrystals: Shell Isolation Versus Surface Treatment.

Understanding Trap States in InP and GaP Quantum Dots Through Density Functional Theory

Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector

Facet Control for Trap‐State Suppression in Colloidal Quantum Dot Solids

Emissive Surface Traps Lead to Asymmetric Photoluminescence Line Shape in Spheroidal CsPbBr3 Quantum Dots

Effects of surface structure and Ag-Sb nanodots on electronic properties of PbTe (1 0 0) facets from first-principles calculations

Energetics of Nonradiative Surface Trap States in Nanoparticles Monitored by Time-of-Flight Photoconduction Measurements on Nanoparticle-Polymer Blends

Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy

Preparation of Quantum Dot Light-emitting Diodes Based on the Quantum Dots-CBP Hybrid

Effects Of Surface Structure And Ag-Sb Nanodots On Electronic Properties Of Pbte (100) Facets From First-Principles Calculations

PbS Colloidal Quantum Dots: Ligand Exchange in Solution

Size Engineering of Trap Effects in Oxidized and Hydroxylated ZnSe Quantum Dots

High-Radiance Shortwave Infrared Light-Emitting Diodes Based on Highly Stable PbS Colloidal Quantum Dots

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Optimizing Surface Passivation of n‐Type Quantum Dots for Efficient PbS Quantum Dot Solar Cells

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices