Abstract:Abstract We have developed efficient numerical algorithms for solving 3D steady-state Poisson-Nernst-Planck (PNP) equations with excess chemical potentials described by the classical density functional theory (cDFT). The coupled PNP equations are discretized by a finite difference scheme and solved iteratively using the Gummel method with relaxation. The Nernst-Planck equations are transformed into Laplace equations through the Slotboom transformation. Then, the algebraic multigrid method is applied to efficiently solve the Poisson equation and the transformed Nernst-Planck equations. A novel strategy for calculating excess chemical potentials through fast Fourier transforms is proposed, which reduces computational complexity from O ( N 2 ) to O ( N log N ), where N is the number of grid points. Integrals involving the Dirac delta function are evaluated directly by coordinate transformation, which yields more accurate results compared to applying numerical quadrature to an approximated delta function. Numerical results for ion and electron transport in solid electrolyte for lithiumion (Li-ion) batteries are shown to be in good agreement with the experimental data and the results from previous studies.

Reconstruction of the Doping Profile in Vlasov-Poisson

Reconstruction of the doping profile in Vlasov-Poisson system

Ground state solutions for Schrödinger-Poisson system with a doping profile

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Stable standing waves for Nonlinear Schrödinger-Poisson system with a doping profile

Strong instability of standing waves for $L^2$-supercritical Schrödinger-Poisson system with a doping profile

The repulsive Euler-Poisson equations with variable doping profile

Reconstruction of degenerate conductivity region for parabolic equations

Stability of steady states of the 3-D Navier-Stokes-Poisson equations with non-flat doping profile in exterior domains

Steady Hydrodynamic Model of Semiconductors with Sonic Boundary and Transonic Doping Profile

Quasilinear Formulation with a Simple Remeshing Scheme for the Finite Element Based Simulation of Dopant Diffusion in Silicon

The Well-Posedness of Bipolar Semiconductor Hydrodynamic Model with Recombination-Generation Rate on the Bounded Interval

Reverse Doping Asymmetry in Semiconductor Thin Films Using External Voltage

Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

Semiconductors and Dirichlet-to-Neumann maps

Simulating the Random Dopant Effect: A New Three- Dimensional Monte Carlo Approach

Critical Points for Least-Squares Estimation of Dipolar Sources in Inverse Problems for Poisson Equation

Inverse Materials Design of Doping Strategies with AI, Thermodynamics, and Density Functional Theory

Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors.

Numerical Solution of 3D Poisson-Nernst-Planck Equations Coupled with Classical Density Functional Theory for Modeling Ion and Electron Transport in a Confined Environment