Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

A DFT study of the structural and electronic properties of single and double acceptor dopants in MX2 monolayers

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

Tuning the Atomic and Electronic Structures of Mirror Twin Boundaries in Molecular Beam Epitaxy Grown MoSe2 Monolayers Via Rhenium Doping

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model

Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements.

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

A Comparative First-Principles Study of Point Defect Properties in the Layered MX2 (M = Mo, W; X = S, Te): Substitution by the Groups III, V and VII Elements

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Exploring electronic features in monolayer and bilayer MX 2 (M = Hf, Zr; X = S, Se) structures under shear strain

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

Evaluation performance to assess accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Mo, W and B = S, Se and Te)

First Principles Study of Structural, Vibrational and Electronic Properties of Graphene-Like MX2 (m=mo, Nb, W, Ta; X=S, Se, Te) Monolayers

Assessing the accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Nb, Ta and B = S, Se, Te)

Novel doping alternatives for single-layer transition metal dichalcogenides

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers