Abstract:The discovery of graphene in 2004 by Konstantin Novoselov and Andre Geim opened a new scientific arena: “2D materials”. The finding of new layered and non-layered materials and their potential applications in various fields has been taken a great attention in recent years. A wide variety of 2D materials such as transition metal dichalcogenides (TMDs), transition metal trichalogenides (Bi2Se3, Bi2Te3, etc.), transition metal monochalcogenide (GaSe, GaS, etc.), transition metal thiophosphides (MnPS3, FePS3, etc.), silicene, phosphorene and hexagonal boron nitride have been found to possess many fascinating and unique properties that are promising for various potential applications such as in optoelectronics, sensors, spintronics, valleytronics, energy storage and catalysis. Among the 2D family, the TMDs grasp diverse properties, ranging from insulator, semimetal, metal, semiconductor and superconductor and make them most interesting 2D materials in both academic and industrial perspectives. The TMDs are usually abbreviated by the chemical formula of MX2, where M is a transition metal such as Cr, Mo, W, Re, Ta, Zr and Pd, and X is a chalcogen of S, Se and Te. The different filling states of the d orbitals in this wide range of transition metals gives rise to TMDs with versatile properties. Among TMDs, group 6 TMDs such as MoS2, WS2, MoSe2 and WSe2 are attracting great attention due to their semiconducting nature, layer-dependent bandgap and strong light–matter interaction. The finite and tunable bandgap of group 6 TMDs compensate the lack in microelectronic application of graphene which arises due to its gapless feature. Herein we address different phases of TMDs including hexagonal (H), trigonal (T) and rhombohedral (R). We reviewed the optical and electronic properties such as thickness-dependent band structure, spin–orbit coupling, excitonic properties, Berry-phase-related properties and valley Hall effect of semiconducting TMDs. The modulation of electronic properties by external stimuli such as electric field and strain is also discussed in this chapter. The metallic TMDs such as 1T phase of group 6 TMDs, Ti-, V-, Nb-based TMD and 2H phase of NbS2, NbSe2, TaS2 and TaSe2 are discussed. The magnetism, strain and doping-induced magnetism in both metallic and semiconducting TMDs are addressed in this chapter.

Assessing the accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Nb, Ta and B = S, Se, Te)

Evaluation performance to assess accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Mo, W and B = S, Se and Te)

Structural Characterization and Functional Assessment of Exchange-Correlation Functionals in van der Waals TMDs AB2 (A = Mo, W; B = S, Se, Te)

Reconstructed Electronic Structure in 2D vdW 1T-Ta$S_2$ for Quantum Sensing and Information Science

A Comparative First Principles Study of Two-Dimensional Transition Metal Dichalcogenides

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

First principles coupled cluster theory of the electronic spectrum of the transition metal dichalcogenides

Two-dimensional Charge Density Waves in TaX2 ( X=S , Se, Te) from First Principles

Ab initio calculation of the effective Coulomb interactions in MX2 (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=S, Se, Te): intrinsic magnetic ordering and Mott insulating phase

Synthesis and Characterization of 2D Ternary Compound TMD Materials Ta3VSe8

Towards accurate ionic relaxation algorithms for two-dimensional chalcogenide van der Waals materials - A first-principles study

Two-dimensional charge density wave TaX$_2$ (X=S, Se, Te) from first principles

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

High‐Throughput Computational Characterization of 2D Compositionally Complex Transition‐Metal Chalcogenide Alloys

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

Nonconventional screening of Coulomb interaction in two-dimensional semiconductors and metals: A comprehensive cRPA study of MX2 (M=Mo, W, Nb, Ta; X=S, Se, Te)

Electron-phonon interaction and transport properties of metallic bulk and monolayer transition metal dichalcogenide TaS$_2$

A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2

Simulation of Transition Metal Dichalcogenides

Symmetry driven topological phases in XAgBi (X=Ba,Sr): An Ab-initio hybrid functional calculations