Abstract:The discovery of graphene in 2004 by Konstantin Novoselov and Andre Geim opened a new scientific arena: “2D materials”. The finding of new layered and non-layered materials and their potential applications in various fields has been taken a great attention in recent years. A wide variety of 2D materials such as transition metal dichalcogenides (TMDs), transition metal trichalogenides (Bi2Se3, Bi2Te3, etc.), transition metal monochalcogenide (GaSe, GaS, etc.), transition metal thiophosphides (MnPS3, FePS3, etc.), silicene, phosphorene and hexagonal boron nitride have been found to possess many fascinating and unique properties that are promising for various potential applications such as in optoelectronics, sensors, spintronics, valleytronics, energy storage and catalysis. Among the 2D family, the TMDs grasp diverse properties, ranging from insulator, semimetal, metal, semiconductor and superconductor and make them most interesting 2D materials in both academic and industrial perspectives. The TMDs are usually abbreviated by the chemical formula of MX2, where M is a transition metal such as Cr, Mo, W, Re, Ta, Zr and Pd, and X is a chalcogen of S, Se and Te. The different filling states of the d orbitals in this wide range of transition metals gives rise to TMDs with versatile properties. Among TMDs, group 6 TMDs such as MoS2, WS2, MoSe2 and WSe2 are attracting great attention due to their semiconducting nature, layer-dependent bandgap and strong light–matter interaction. The finite and tunable bandgap of group 6 TMDs compensate the lack in microelectronic application of graphene which arises due to its gapless feature. Herein we address different phases of TMDs including hexagonal (H), trigonal (T) and rhombohedral (R). We reviewed the optical and electronic properties such as thickness-dependent band structure, spin–orbit coupling, excitonic properties, Berry-phase-related properties and valley Hall effect of semiconducting TMDs. The modulation of electronic properties by external stimuli such as electric field and strain is also discussed in this chapter. The metallic TMDs such as 1T phase of group 6 TMDs, Ti-, V-, Nb-based TMD and 2H phase of NbS2, NbSe2, TaS2 and TaSe2 are discussed. The magnetism, strain and doping-induced magnetism in both metallic and semiconducting TMDs are addressed in this chapter.

Evaluation performance to assess accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Mo, W and B = S, Se and Te)

Structural Characterization and Functional Assessment of Exchange-Correlation Functionals in van der Waals TMDs AB2 (A = Mo, W; B = S, Se, Te)

Assessing the accurate exchange-correlation functional in van der Waals TMD Materials AB2 (A = Nb, Ta and B = S, Se, Te)

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

A Comparative First Principles Study of Two-Dimensional Transition Metal Dichalcogenides

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

First principles coupled cluster theory of the electronic spectrum of the transition metal dichalcogenides

High‐Throughput Computational Characterization of 2D Compositionally Complex Transition‐Metal Chalcogenide Alloys

Simulation of Transition Metal Dichalcogenides

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

A systematic investigation of thermal conductivities of transition metal dichalcogenides

Electronic Structures of Monolayer Binary and Ternary 2D Materials: MoS2, WS2, Mo1−xCrxS2, and W1−xCrxS2 Using Density Functional Theory Calculations

Reconstructed Electronic Structure in 2D vdW 1T-Ta$S_2$ for Quantum Sensing and Information Science

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

Ab initio calculation of the effective Coulomb interactions in MX2 (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=S, Se, Te): intrinsic magnetic ordering and Mott insulating phase

Ab initio Investigation of Structural Stability and Exfoliation Energies in Transition Metal Dichalcogenides based on Ti-, V-, and Mo-Group Elements

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model

Towards accurate ionic relaxation algorithms for two-dimensional chalcogenide van der Waals materials - A first-principles study