Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

A Comparative First-Principles Study of Point Defect Properties in the Layered MX2 (M = Mo, W; X = S, Te): Substitution by the Groups III, V and VII Elements

Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements.

Comparison of the effect of C doping on the photovoltaic properties of the defect state transition metal sulfur compounds MX2 (M=Mo, W; X=S, Te): a first-principles study

Defects-/doping-driven modulation of the electronic and magnetic properties of 2H- and Td-phase W T e 2 monolayers: A first-principle study

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Insight into Point Defects and Complex Defects in β-Mo2C and Carbide Evolution from First Principles

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

A DFT study of the structural and electronic properties of single and double acceptor dopants in MX2 monolayers

Electronic structures of defects and magnetic impurities in MoS2 monolayers

Effects of Doped Elements (Si, Cr, W and Nb) on the Stability, Mechanical Properties and Electronic Structures of MoAlB Phase by the First-Principles Calculation

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

A Hybrid-DFT Study of Intrinsic Point Defects in $MX_2$ ($M$=Mo, W; $X$=S, Se) Monolayers

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Novel doping alternatives for single-layer transition metal dichalcogenides

First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2

Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study

Influence of mono‐ and bi‐vacancy doped alkaline‐earth metals on the optoelectronic properties of monolayer defective state MoTe 2 : A first‐principles study

First-principle calculation study of intrinsic point defects and doping performance of MoSi 2 N 4

First-Principles Study of Defect Properties of Zinc Blende Mgte

First Principles Study of Structural, Vibrational and Electronic Properties of Graphene-Like MX2 (m=mo, Nb, W, Ta; X=S, Se, Te) Monolayers