Room-temperature ferromagnetism in Fe-doped SnSe bulk single crystalline semiconductor

Guangqiang Mei,Wei Tan,Xingxia Cui,Cong Wang,Qing Yuan,Yafei Li,Cancan Lou,Xuefeng Hou,Mengmeng Zhao,Yong Liu,Wei Ji,Xiaona Zhang,Min Feng,Limin Cao
DOI: https://doi.org/10.1016/j.mtphys.2023.101251
IF: 11.021
2023-10-21
Materials Today Physics
Abstract:The quest for pragmatic room-temperature (RT) magnetic semiconductors (MSs) with a suitable bandgap constitutes one of the contemporary opportunities to be exploited. This may provide a materials platform for to bring new-generation ideal information device technologies into real-world applications where the otherwise conventionally separately utilized charge and spin are simultaneously exploited. Here we present RT ferromagnetism in an Fe-doped SnSe (Fe:SnSe) van der Waals (vdW) single crystalline ferromagnetic semiconductor (FMS) with a semiconducting bandgap of ∼1.19 eV (comparable to those of Si and GaAs). The synthesized Fe:SnSe single crystals feature a dilute Fe content of <1.0 at%, a Curie temperature of ∼310 K, a layered vdW structure nearly identical to that of pristine SnSe, and the absence of in-gap defect states. The Fe:SnSe vdW diluted magnetic semiconductor (DMS) single crystals are grown using a simple temperature-gradient melt-growth process, in which the magnetic Fe atom doping is realized uniquely using FeI 2 as the dopant precursor whose melting point is low with respect to crystal growth, and which in principle possesses industrially unlimited scalability. Our work adds a new member in the family of long-searching RT magnetic semiconductors, and may establish a generalized strategy for large-volume production of related DMSs.
materials science, multidisciplinary,physics, applied
What problem does this paper attempt to address?