Abstract:Nonreciprocal electrical transport, characterized by an asymmetric relationship between current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, the field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while the eMCA is linked to spin-splitting arising from the absence of inversion symmetry. Both the SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.

Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction

A two-dimensional Fe-doped SnS2 magnetic semiconductor

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion

Very large magnetoresistance in Fe 0.28 TaS 2 single crystals

Coexistence of large positive and negative magnetoresistance in Cr2Si2Te6 ferromagnetic semiconductor

Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Unconventional Magneto-Transport Properties of the Layered Antiferromagnet Fe1/3NbS2

Robust Half-Metallic Magnetism in Two-Dimensional Fe/MoS2

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

First-principles study of magnetic and optical properties in dopant-doped two-dimensional SnS2

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4

Magnetism, Magnetotransport Properties and Their Correlation with Magnetic Field in the Semiconductor-Type EuMnSb2

Magnetism, magnetotransport properties and their correlation with magnetic field in the semiconductor-type EuMnSb 2

Large magnetic anisotropy energy and robust half-metallic ferromagnetism in 2D MnXSe$_4$ (X = As, Sb)

Multiple modulation of magnetism in two-dimensional FeCl2/In2Se3 van der Waals heterostructure

Giant tunneling magnetoresistance in Fe$_2$CrSi/Fe$_2$TiSi/Fe$_2$CrSi magnetic tunnel junction

Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices