Strain fingerprinting of exciton valley character

Abhijeet Kumar,Denis Yagodkin,Roberto Rosati,Douglas J Bock,Christoph Schattauer,Sarah Tobisch,Joakim Hagel,Bianca Höfer,Jan N Kirchhof,Pablo Hernández López,Kenneth Burfeindt,Sebastian Heeg,Cornelius Gahl,Florian Libisch,Ermin Malic,Kirill I Bolotin
2023-12-12
Abstract:Momentum-indirect excitons composed of electrons and holes in different valleys define optoelectronic properties of many semiconductors, but are challenging to detect due to their weak coupling to light. The identification of an excitons' valley character is further limited by complexities associated with momentum-selective probes. Here, we study the photoluminescence of indirect excitons in controllably strained prototypical 2D semiconductors (WSe$_2$, WS$_2$) at cryogenic temperatures. We find that these excitons i) exhibit valley-specific energy shifts, enabling their valley fingerprinting, and ii) hybridize with bright excitons, becoming directly accessible to optical spectroscopy methods. This approach allows us to identify multiple previously inaccessible excitons with wavefunctions residing in K, $\Gamma$, or Q valleys in the momentum space as well as various types of defect-related excitons. Overall, our approach is well-suited to unravel and tune intervalley excitons in various semiconductors.
Mesoscale and Nanoscale Physics,Other Condensed Matter
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to identify and regulate the valley characteristics of momentum - indirect excitons in two - dimensional transition metal dichalcogenides (TMDs), especially those "dark" excitons that are difficult to detect by traditional optical methods. Specifically, the authors aim to reveal the valley characteristics of these excitons through the method of strain engineering and achieve their optical detection. ### Problem Background In two - dimensional transition metal dichalcogenides (such as WSe₂ and WS₂), there are multiple types of excitons, including direct excitons (bright excitons) and indirect excitons (dark excitons). Due to their large oscillation strength, direct excitons can directly couple with light, so they show significant features in optical absorption and emission spectra. However, indirect excitons are difficult to study by conventional optical methods because of their weak light - coupling characteristics. These indirect excitons have an important impact on the photoelectric properties and carrier dynamics of materials, but the lack of momentum resolution and low oscillation strength make their research challenging. ### Research Objectives 1. **Identify the Valley Characteristics of Excitons**: Through strain engineering, identify the valley characteristics (valley character) of momentum - indirect excitons, that is, determine the valleys where the electron and hole wave functions are located. 2. **Enhance the Optical Detectability of Indirect Excitons**: Through the strain - induced hybridization effect, make the originally "dark" indirect excitons become detectable by optical means. 3. **Regulate the Energy and Interaction of Excitons**: Use strain to regulate the energy separation of excitons, thereby controlling the interaction between excitons and exploring new physical phenomena. ### Main Findings - **Valley Fingerprint Identification**: By applying mechanical strain, it was observed that excitons with different valley characteristics showed different energy shift rates, thus achieving the identification of the valley characteristics of excitons. - **Hybridization Effect**: When the strain reaches a specific value, the indirect excitons hybridize with the direct excitons, enhancing the optical activity of the indirect excitons. - **First Observation of ΓQ and KQ Excitons**: Through strain engineering, the ΓQ and KQ excitons, which were previously only theoretically predicted to exist, were experimentally observed for the first time. - **Strain Regulation of Quantum - Confined States**: A wide - range strain regulation of quantum - confined states related to single - photon emitters was achieved, up to a maximum of 80 meV. ### Significance This research provides new tools for understanding and regulating excitons in two - dimensional materials, especially for achieving precise control of indirect excitons through strain engineering at low temperatures. This not only helps to deeply understand the dynamic behavior of excitons but also lays the foundation for the future development of exciton - based optoelectronic devices and quantum technologies.