Abstract:Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.

Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time‐Resolved Photoluminescence

Spatiotemporally controlled room-temperature exciton transport under dynamic strain

Strain-tunable Single Photon Sources in WSe2 Monolayers

Nanoscale confinement and control of excitonic complexes in a monolayer WSe2

Dynamic Tuning of Single-Photon Emission in Monolayer WSe2 via Localized Strain Engineering

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Dynamical Control of Excitons in Atomically Thin Semiconductors

Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer

Strain fingerprinting of exciton valley character in 2D semiconductors

Dark exciton anti-funneling in atomically thin semiconductors

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

Strain-engineered growth of two-dimensional materials

Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors