Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Spatiotemporally controlled room-temperature exciton transport under dynamic strain

Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time‐Resolved Photoluminescence

Strain-dependent exciton diffusion in transition metal dichalcogenides

Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing

Room-temperature electrical control of exciton flux in a van der Waals heterostructure

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Dynamical Control of Excitons in Atomically Thin Semiconductors

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Large Biaxial Compressive Strain Tuning of Neutral and Charged Excitons in Single-Layer Transition Metal Dichalcogenides

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Dark-exciton based strain sensing in transition metal dichalcogenides

Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe 2 /MoS 2 Heterostructures

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

Transient Optical Modulation of Two-Dimensional Materials by Excitons at Ultimate Proximity

Anisotropic Raman Scattering and Mobility in Monolayer 1T D -Res 2 Controlled by Strain Engineering

Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS2 by Circularly Polarized Light