Abstract:The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3–PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials' emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

Strain-tunable Single Photon Sources in WSe2 Monolayers

Strain engineering of the electronic states of silicon-based quantum emitters

Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Dynamic Tuning of Single-Photon Emission in Monolayer WSe2 via Localized Strain Engineering

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

Resonance fluorescence from waveguide-coupled strain-localized two-dimensional quantum emitters

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Strain engineering in semiconducting two-dimensional crystals

Controlling electric and magnetic Purcell effects in phosphorene via strain engineering

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Strain-engineered growth of two-dimensional materials

Optical Strain Engineering Enables Dynamic Spatial Control of 2D Nanomaterial Properties

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Giant light emission enhancement in strain-engineered InSe/MS$_2$ (M=Mo,W) van der Waals heterostructures

Strain fingerprinting of exciton valley character in 2D semiconductors

Strain-Tunable Single-Photon Source Based on a Quantum Dot–Micropillar System