Abstract:Using first-principles and ab initio molecular dynamics calculations, effects of temperatures on ferroelastic transition, band gap engineering, anisotropic carrier effective masses, and stability of transition metal adatom magnetization in phosphorene under tensile strains are investigated, which determine mainly its unique properties for designing novel low-dimensional electronic and spintronic devices. We find that (i) the ferroelastic transition of phosphorene under tensile strains predicted at 0 K is replaced by developments of a series of twinning structures above the room temperature (300 K), which will modify predictions on the band structure, carrier mobility, and thermal conductivity of phosphorene in strain engineering processes; (ii) the emerging twinning structure brings about strong ductility in phosphorene, which can sustain stretching up to a tensile strain of 73% at 300 K before the structural breakdown; (iii) the stable sites for the adsorbed TM atoms (V, Cr, and Mn) on phosphorene are higher in energy compared to those of the (interstitially) doped TM atoms in phosphorene. However, the potential barriers between the adsorbed and doped states are high enough to stabilize the adsorbed TM atoms on phosphorene even at high temperatures (450 K); (iv) under moderate tensile strains (similar to 10%) at room temperature, the adsorbed TM atoms start to move into phosphorene as interstitial dopants. Such room or high temperature stretching may provide a possible way to prepare dilute magnetic semiconducting phosphorene using adsorbed TM atoms from simple chemical vapor depositions; (v) for some TM atoms (V, Cr), whose magnetic moments come from the 3d electron states near the Fermi level, their magnetic moments decrease substantially as they move into phosphorene, while for other TM atoms (Mn), whose magnetic moments come from the 3d electron states deep below the Fermi level, their magnetic moments are stable as their positions change. These results will deepen our understandings of phosphorene and broaden its technological applications as a versatile two-dimensional material.

Controlling electric and magnetic Purcell effects in phosphorene via strain engineering

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Controlling high-harmonic generation from strain engineered monolayer phosphorene

The Phosphorene Under The External Electronic Field And Strain

Strain-tunable Photogalvanic Effect in Phosphorene

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

Unusual Plasmonic Responses in Phosphorene with Topological Transition: the Interplay of Strain and Doping

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Outstanding spin-transport properties of a flexible phosphorene photodetector driven by the photogalvanic effect under mechanical strains

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Tuning electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Effects of Temperature on Strain Engineering and Transition-Metal Adatom Magnetization in Phosphorene: Ab Initio Molecular Dynamics Studies

Spin-polarized quantum transport properties through flexible phosphorene

Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Strong Purcell enhancement of an optical magnetic dipole transition

Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice