Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Direct imaging of valley-polarized excitons in a van der Waals heterostructure

Direct Imaging of Valley-Polarized Excitons in 2D Semiconductors

Valley coherent exciton-polaritons in a monolayer semiconductor

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Room temperature interlayer exciton valley polarization and valley Hall effect

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Valley-polarized Local Excitons in WSe2/WS2 Vertical Heterostructures.

Valley phonons and exciton complexes in a monolayer semiconductor

Direct visualization of hybrid excitons in van der Waals heterostructures

Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe$_{2}$/WSe$_{2}$ Heterostructures

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Opto-valleytronic imaging of atomically thin semiconductors

Long valley lifetime of dark excitons in single-layer WSe2

Strain fingerprinting of exciton valley character

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Excitons in a reconstructed moiré potential in twisted WSe2/WSe2 homobilayers

Robust Room Temperature Valley Hall Effect of Interlayer Excitons

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

Valley-magnetophonon resonance for interlayer excitons