Abstract:Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In<sub>2</sub>Se<sub>3</sub>. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03724?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03724</a>.Figures of layer-dependent band structure for 1–4 TL InSe; figure of STS spectra in a linear scale for 1–5 TL InSe; figure of STS linecuts across various defects; figure of STS spectra with spatial homogeneity; figure of 2D plot of STS spectra across a strained defect; figure of STS spectra across various defects/step boundaries; figure of comparison for the QPI observations and the STS in determining the band gap size; figure of comparison for the onset and shoulder of band gap edge; figure of band bending across different layer steps (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03724/suppl_file/nn1c03724_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Electrical detection of the flat band dispersion in van der Waals field-effect structures

Electric fields and valence band offsets at strained [111] heterojunctions

Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system

Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

Electric Field Analyses on Monolayer Semiconductors: the Example of InSe

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

Bandstructure Engineering in 2D Materials Using Ferroelectric Materials

Tuning the Band Alignment and Electronic Properties of ${\rm{GaSe}}/{\rm{Sn}}$ X $_{2}$ ( X = ${\rm{S}}$, ${\rm{Se}}$) Two-Dimensional van der Waals Heterojunctions via an Electric Field

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering

Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Theoretical investigation on the electronic structure of new InSe/CrS2 van der Waals heterostructure

Photocurrent generation with two-dimensional van der Waals semiconductors

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

Largely tunable band structures of few-layer InSe by uniaxial strain

Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas

Ultrafast Charge Transfer and Optoelectronic Performance of N-Inse/m-sns (gese) Van Der Waals Heterostructures

Tailoring the Energy Funneling Across the Interface in InSe/MoS2 Heterostructures by Electrostatic Gating and Strain Engineering