Research progress on two-dimensional indium selenide crystals and optoelectronic devices
Dan Zheng,Peng Chen,Yi Liu,Xing Li,Kejing Liu,Ziang Yin,Riccardo Frisenda,Qinghua Zhao,Tao Wang
DOI: https://doi.org/10.1039/d4ta01584c
IF: 11.9
2024-06-02
Journal of Materials Chemistry A
Abstract:Two-dimensional (2D) materials, with unique electronic properties, superior optoelectronic properties, and dangling-bond-free surfaces, have attracted significant attention and experienced rapid development both in fundamental science and for practical applications. Amid the plethora of 2D materials, indium selenide (InSe) has emerged as a promising candidate for future high-mobility optoelectronic devices. Nobel Prize laureate Andre Geim even describes it as "the 'golden middle' between silicon and graphene". Over the past decade, remarkable findings and progress have been made in the fabrication of 2D InSe crystals and their application in devices, motivating us to delve deeply into these forefront developments. In this review, the physical properties such as the crystalline structure, band structure and photoluminescence characteristics are discussed at first. Then, the advancement in terms of synthesis techniques, characteristics and synthesis schemes in the fabrication of 2D InSe are summarized. Subsequently, the mechanisms of optimized strategy and recent progress in field effect transistors (FETs) as well as photodetectors based on this material are summarized, also highlighting the promising applications of 2D InSe in sensors. Finally, an outlook, challenges, and potential future research directions in the fabrication of 2D InSe and its devices are presented.
materials science, multidisciplinary,chemistry, physical,energy & fuels