Abstract:I discuss uniform, isotropic, plane, singly connected, electrically linear, regular symmetric Hall-plates with an arbitrary number of N peripheral contacts exposed to a uniform perpendicular magnetic field of arbitrary strength. In practice, the regular symmetry is the most common one. If the Hall-plates are mapped conformally to the unit disk, regular symmetry means that all contacts are equally large and all contacts spacings are equally large, yet the contacts spacings may have a different size than the contacts. Such Hall-plates do not change when they are rotated by 360°/N. Their indefinite conductance matrices are circulant matrices, whose complex eigenvalues are computable in closed form. These eigenvalues are used to discuss the Hall-output voltage, the maximum noise-efficiency, and Van-der-Pauw's method for measuring sheet resistances. For practical use, I report simple approximations for Hall-plates with four contacts and 90° symmetry with popular shapes like disks, rectangles, octagons, squares, and Greek crosses with and without rounded corners.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is related to the analysis of the electrical characteristics of regular symmetric Hall - plates with an arbitrary number \(N\) of peripheral contact points in a uniform vertical magnetic field, especially the calculation of their eigenvalues. Specifically, the author focuses on how to map these regular symmetric Hall - plates onto the unit disk by conformal mapping and use the properties of cyclic matrices to calculate the eigenvalues of their indefinite admittance matrices.
### Main objectives of the paper:
1. **Calculation of eigenvalues**: The paper aims to provide closed - form solutions for the complex eigenvalues of the indefinite admittance matrices of regular symmetric Hall - plates.
2. **Application areas**: These eigenvalues are used to discuss the Hall output voltage, the maximum noise efficiency, and the van der Pauw method for measuring sheet resistance.
3. **Simplified formulas**: For the common four - contact 90° symmetric Hall - plate, simple approximate formulas are provided, which are applicable to shapes such as circular, rectangular, octagonal, square, and Greek cross, with or without rounded corners.
### Background and motivation:
- **Hall effect**: When an electric current passes through a semiconductor material, if a magnetic field perpendicular to the direction of the current is applied, a transverse electric field, that is, the Hall electric field, will be generated. It is very complicated to accurately solve the analytical solution of the electric field problem in this case, especially in the case of geometric asymmetry.
- **Conformal transformation**: Through conformal transformation, complex geometric shapes can be mapped onto simple geometric shapes (such as the unit disk), thereby simplifying the solution of the problem.
- **Symmetry**: Regular symmetric Hall - plates have the highest degree of symmetry, which means that they will not change after being rotated by \(360^\circ/N\). This symmetry makes the indefinite admittance matrix a cyclic matrix, so that its eigenvalues can be calculated.
### Main contributions:
1. **Eigenvalue calculation**: The paper derives the closed - form expressions of the eigenvalues of regular symmetric Hall - plates, which helps to understand the electrical characteristics of Hall - plates under different magnetic field intensities.
2. **Practical applications**: The approximate formulas provided can help engineers and researchers design and optimize Hall sensors and other related devices more conveniently.
3. **Theoretical extension**: The paper also explores how to generalize the van der Pauw method to regular symmetric Hall - plates to measure sheet resistance, whether or not a magnetic field is applied.
In conclusion, through in - depth research on the eigenvalues of regular symmetric Hall - plates, this paper provides an important theoretical basis and practical tool for understanding and optimizing Hall - effect devices.