Abstract:With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research community. The scalability and the potential to compute beyond the von Neumann model make VO2 especially appealing for implementation in oscillating neural networks for artificial intelligence (AI) applications, to solve constraint satisfaction problems, and for pattern recognition. Its integration into large networks of oscillators on a Silicon platform still poses challenges associated with the stabilization in the correct oxidation state and the ability to fabricate a structure with predictable electrical behavior showing very low variability. In this work, the role played by the different annealing parameters applied by three methods (slow thermal annealing, flash annealing, and rapid thermal annealing), following the vanadium oxide atomic layer deposition (ALD), on the formation of VO2 grains is studied and an optimal substrate stack configuration that minimizes variability between devices is proposed. Material and electrical characterizations are performed on the different films and a step-by-step recipe to build reproducible VO2-based oscillators is presented, which is argued to be made possible thanks to the introduction of a hafnium oxide (HfO2) layer between the silicon substrate and the vanadium oxide layer. Up to seven nearly identical VO2-based devices are contacted simultaneously to create a network of oscillators, paving the way for large-scale implementation of VO2 oscillating neural networks.

Large electro-opto-mechanical coupling in VO2 neuristors

Large electro-opto-mechanical coupling in VO2 neuristors

Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors

Artificial afferent neurons based on the metal-insulator transition of VO2

Electrical and acoustic self-oscillations in an epitaxial oxide for neuromorphic applications

Electrical Actuation and Readout in a Nanoelectromechanical Resonator Based on a Laterally Suspended Zinc Oxide Nanowire

Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators

High-order sensory processing nanocircuit based on coupled VO2 oscillators

Physical Origin of Negative Differential Resistance in V3 O5 and Its Application as a Solid-State Oscillator

Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors

Reconfigurable cascaded thermal neuristors for neuromorphic computing

Vanadium Dioxide Circuits Emulate Neurological Disorders

Quantum Imaging of the Reconfigurable VO2 Synaptic Electronics for Neuromorphic Computing.

Inherent stochasticity during insulator–metal transition in VO 2

Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors

Spatially Distributed Ramp Reversal Memory in VO2 (Adv. Electron. Mater. 10/2023)

Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals

Voltage Control of Metal-Insulator Transition and Non-Volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures.

Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

Quantum imaging of the reconfigurable VO 2 synaptic electronics for neuromorphic computing