Abstract:Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly for their perspectives toward artificial synapses for neural networks that can emulate neuromorphic visualization and memorize information. Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.

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Reconfigurable Synaptic and Neuronal Functions in a V/VOx/HfWOx/Pt Memristor for Nonpolar Spiking Convolutional Neural Network (Adv. Funct. Mater. 23/2022)

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Vertical‐organic‐nanocrystal‐arrays for Crossbar Memristors with Tuning Switching Dynamics Toward Neuromorphic Computing

Biological plausibility and stochasticity in scalable VO2 active memristor neurons

Temporal credit assignment for one-shot learning utilizing a phase transition material

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Ramp Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Graphene‐Assisting Nonvolatile Vanadium Dioxide Phase Transition for Neuromorphic Machine Vision

Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems

Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks

Reconfigurable Mott electronics for homogeneous neuromorphic platform

Quantum Imaging of the Reconfigurable VO2 Synaptic Electronics for Neuromorphic Computing.

Reconfigurable Synaptic and Neuronal Functions in a V/VO x /HfWO x /Pt Memristor for Nonpolar Spiking Convolutional Neural Network

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation