Abstract:A configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron by controlling the forming compliance current (FCC). When FCC ≤ 2 mA, the memristors exhibit the resistive‐switching property, enabling multiple types of synaptic plasticity. When FCC ≥ 3 mA, the memristors show the threshold switching property with excellent endurance (>1012), thus achieving various neuronal functions. For the first time, a configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron after fabrication by controlling the forming compliance current (FCC). When the FCC ≤ 2 mA, the memristors exhibit the resistive‐switching (RS) property, enabling multiple types of synaptic plasticity, including short‐term potentiation, paired‐pulse facilitation, short‐term memory, and long‐term memory. When the FCC ≥ 3 mA, the memristors can be electroformed and exhibit the threshold switching (TS) property with excellent endurance (>1012), thus achieving various biological neuron characteristics, such as threshold‐triggering, strength‐modulation of spike frequency, and leaky integrate‐and‐fire. This enables the successful implementation of a spiking Pavlov's dog that employs the spikes as information carrier by connecting an RS NbOx memristor as artificial synapse and a TS memristor as artificial neuron in series. Furthermore, a fully NbOx memristors‐based single‐layer spiking neural network is simulated. It is first found that, due to the forgetting property of synapse, the recognition accuracy for the Modified National Institute of Standards and Technology handwritten digits is increased from 85.49% to 91.45%. This study provides a solid foundation for the development of neuromorphic machines based on the principles of the human brain.

Reconfigurable Synaptic and Neuronal Functions in a V/VOx/HfWOx/Pt Memristor for Nonpolar Spiking Convolutional Neural Network (Adv. Funct. Mater. 23/2022)

Reconfigurable Synaptic and Neuronal Functions in a V/VO x /HfWO x /Pt Memristor for Nonpolar Spiking Convolutional Neural Network

Forming-free and Annealing-free V/VOx/HfWOx/Pt Device Exhibiting Reconfigurable Threshold and Resistive Switching with High Speed (<30ns) and High Endurance (>1012/>1010)

Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Forming-free and Annealing-free V/VO<sub>x</sub>/HfWO<sub>x</sub>/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>10<SUP>12</SUP>/>10<SUP>10</SUP>)

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

Electronically Reconfigurable Memristive Neuron Capable of Operating in Both Excitation and Inhibition Modes

Configurable Synaptic and Stochastic Neuronal Functions in ZnTe-Based Memristor for an RBM Neural Network

Reconfigurable Mott electronics for homogeneous neuromorphic platform

A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Artificial HfO2/TiOx Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing

Artificial HfO 2 /TiO x Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing.

Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing

Artificial HfO<sub>2</sub>/TiO<sub>x</sub> Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing

Co-existence of bipolar nonvolatile and volatile resistive switching based on WO 3 nanowire for applications in neuromorphic computing and selective memory

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO X /zno X /tin Memristive System

Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing