Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Forming-free and Annealing-free V/VO<sub>x</sub>/HfWO<sub>x</sub>/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>10<SUP>12</SUP>/>10<SUP>10</SUP>)

Forming-free and Annealing-free V/VOx/HfWOx/Pt Device Exhibiting Reconfigurable Threshold and Resistive Switching with High Speed (<30ns) and High Endurance (>1012/>1010)

Forming-free and Annealing-free V/VO x /HfWO x /Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>10 12 />10 10 )

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Reconfigurable Synaptic and Neuronal Functions in a V/VOx/HfWOx/Pt Memristor for Nonpolar Spiking Convolutional Neural Network (Adv. Funct. Mater. 23/2022)

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO 2 -based RRAM device with a vanadium electrode.

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Controllable Resistive Switching in ReS2/WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Sub-10 Nm Ta Channel Responsible For Superior Performance Of A Hfo2 Memristor

Reconfigurable Synaptic and Neuronal Functions in a V/VO x /HfWO x /Pt Memristor for Nonpolar Spiking Convolutional Neural Network

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

An Electronic Synaptic Device Based on HfO2TiOx Bilayer Structure Memristor with Self-Compliance and Deep-Reset Characteristics.

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors

Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Forming-free and Annealing-free V/VO<sub>x</sub>/HfWO<sub>x</sub>/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (&lt;30ns) and high endurance (&gt;10<SUP>12</SUP>/&gt;10<SUP>10</SUP>)