A Balanced Scorecard for Canadian Hospitals

G. Ross Baker,George H. Pink

DOI: https://doi.org/10.1016/S0840-4704(10)60926-X

1995-12-01

Healthcare Management Forum

Abstract:

What problem does this paper attempt to address?

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Xiangyu Zeng,Liang Zhang,Jiaqi Peng,Qikai Ye,Boyang Ma,Hongsheng Xu,Yulu Liu,Nazifi Sani Shuaibu,Xiaozhi Wang,Yixiu Wang,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1063/5.0170984

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Emerging intelligence applications, such as brain-inspired and in-memory computing, require memory with faster read/write speeds, higher integration, and lower energy consumption. To tackle these challenges, memristors, a type of synaptic device, are considered ideal candidates due to their potential for emulating biological synaptic connections. In this study, a two-dimensional (2D) heterostructure of tellurene/Nb-doped MoS2 (MoS2:Nb) was used as the resistive switching layer to fabricate memristors. By varying the maximum working voltage, the fabricated device can switch between one and two-memory windows, which can be used to imitate the postsynaptic inhibition effect. This is attributed to the competition between the drift and diffusion of the S vacancy in the MoS2:Nb layer, which can modulate the contact Schottky barrier in the material interfaces. Furthermore, biological synapse effects, such as long-term depression and long-term potentiation, can be well mimicked by applying several voltage pulses to the device with good repeatability. This study advances the device physics for understanding the physical working mechanism of the 2D memristor, which can benefit the realization of bio-realistic neuromorphic computing systems based on such memristors.
Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

Muhammad Ismail,Chandreswar Mahata,Myounggon Kang,Sungjun Kim

DOI: https://doi.org/10.1016/j.ceramint.2023.03.030

IF: 5.532

2023-04-22

Ceramics International

Abstract:Oxide-based memristors have emerged as a promising electronic device for high-density memory and neuromorphic applications. In our study, we explored the tunable analog switching and biological synaptic functions of a Pt/ZnO/Al 2 O 3 /TaN memristive device. Using transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS), we confirmed the presence of a TaO x N y interface layer at the anode contact, believed to play a critical role in resistance transitions. The memristive device showed excellent performance, including a stable and reproducible analog switching memory with a low operating voltage ( μ=̶2.0/+1.7V ), good cycling endurance (2 × 10 2 ), a high on/off ratio (>10 3 ), and retention up to 10 4 s at 85 °C. Additionally, multi-state resistances were achieved by varying the reset voltage, enabling the creation of neuromorphic synapses and high-density memories. Direct-current mode set and reset transitions showed multi-state resistance changes similar to potentiation and depression behaviors in biological synapses. Further simulations, including long-term potentiation (LTP) and long-term depression (LTD), paired pulse facilitation (PPF), and convolutional neural network (CNN) simulations for handwritten digits, showed an accuracy of 86.5%. These results indicate that the memristive device is highly suitable for use in high-density memory and brain-inspired computer systems.

materials science, ceramics
Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Yong Huang,Jiahao Yu,Yu Kong,Xiaoqiu Wang

DOI: https://doi.org/10.1039/d2ra05483c

IF: 4.036

2022-01-01

RSC Advances

Abstract:The advent of memristors and the continuing research and development in the field of brain-inspired computing could allow realization of a veritable "thinking machine". In this study, ZnO-based memristors were fabricated using a radio frequency magnetron sputtering method. The ZnO oxide layer was prepared by incorporating silver nanocrystals (NCs). Several synaptic functions, nonlinear transmission characteristics, short-term potentiation, long-term potentiation/depression, and pair-pulse facilitation, were imitated in the memristor successfully. Furthermore, the transition from synaptic behaviors to bipolar resistive switching behaviors of the device was also observed under repeated stimulus. It is speculated that the switching mechanism is due to the formation and rupture of the conductive Ag filaments and the corresponding electrochemical metallization. The experimental results demonstrate that the Ag/Ag:ZnO/Pt memristor with resistive switching and several synaptic behaviors has a potential application in neuromorphic computing and data storage systems.
Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Hao‐Yang Li,Xiao‐Di Huang,Jun‐Hui Yuan,Yi‐Fan Lu,Tian‐Qing Wan,Yi Li,Kan‐Hao Xue,Yu‐Hui He,Ming Xu,Hao Tong,Xiang‐Shui Miao

DOI: https://doi.org/10.1002/aelm.202000309

IF: 6.2

2020-07-15

Advanced Electronic Materials

Abstract:The fully memristive neural network is emerging as a game‐changer in the artificial intelligence competition. Artificial synapses and neurons, as two fundamental elements for hardware neural networks, have been substantially implemented by different devices with memory and threshold switching (TS) behaviors, respectively. However, obtaining controllable memory and TS behaviors in the same memristive material system is still a considerable challenge that holds great potential for realizing compatible artificial neurons and synapses. Here, a heterogeneous bilayer conductive filamentary memristor comprising two different electrolytes with distinct copper ion mobility is reported: Cu/GeTe/Al2O3/Pt, which can demonstrate the governance of switching types. Experimentally, when the thickness of the Al2O3 layer is 3 nm, stable nonvolatile multilevel memory switching (MS) is observed and employed to mimic the synaptic plasticity. With increasing oxide thickness, the switching behavior under the same compliance current alters from MS to volatile TS and is used to emulate the integrate‐and‐fire neuron function. The controllable switching stems from the change in the metal filament morphology within the Al2O3 layer, which is supported by ab initio calculation results. This method enables a new pathway for constructing functionally reconfigurable neuromorphic devices for intelligence neuromorphic systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Electronically Reconfigurable Memristive Neuron Capable of Operating in Both Excitation and Inhibition Modes

Lingxiang Hu,Zongxiao Li,Jiale Shao,Peihong Cheng,Jingrui Wang,Athanasios V Vasilakos,Li Zhang,Yang Chai,Zhizhen Ye,Fei Zhuge

DOI: https://doi.org/10.1021/acs.nanolett.4c02470

2024-09-04

Abstract:Threshold switching (TS) memristors are promising candidates for artificial neurons in neuromorphic systems. However, they often lack biological plausibility, typically functioning solely in an excitation mode. The absence of an inhibitory mode limits neurons' ability to synergistically process both excitatory and inhibitory synaptic signals. To address this limitation, we propose a novel memristive neuron capable of operating in both excitation and inhibition modes. The memristor's threshold voltage can be reversibly tuned using voltages of different polarities because of its bipolar TS behavior, enabling the device to function as an electronically reconfigurable bi-mode neuron. A variety of neuronal activities such as all-or-nothing behavior and tunable firing probability are mimicked under both excitatory and inhibitory stimuli. Furthermore, we develop a self-adaptive neuromorphic vision sensor based on bi-mode neurons, demonstrating effective object recognition in varied lighting conditions. Thus, our bi-mode neuron offers a versatile platform for constructing neuromorphic systems with rich functionality.
A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing

Mingmin Zhu,Zhendi Yu,Gao Hu,Kai Yu,Yulong Jiang,Jiawei Wang,Wenjing Dong,Jinming Guo,Yang Qiu,Guoliang Yu,Hao‐Miao Zhou

DOI: https://doi.org/10.1002/aelm.202400008

IF: 6.2

2024-05-28

Advanced Electronic Materials

Abstract:This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results, which provide a clue to explain the physics behind the bipolar switching and synaptic plasticity. Memristors are a candidate device for artificial neural systems due to their excellent conductance‐regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long‐term potentiation/depression (LTP/D) and paired‐pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaOx/TiOy/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaOx/TiOy/Ti memristor in non‐volatile memory and bioinspired neuromorphic systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Ziyang Zhang,Tianran Li,Yujie Wu,Yinjun Jia,Congwei Tan,Xintong Xu,Guanrui Wang,Juan Lv,Wei Zhang,Yuhan He,Jing Pei,Cheng Ma,Guoqi Li,Haizheng Xu,Luping Shi,Hailin Peng,Huanglong Li

DOI: https://doi.org/10.1002/adma.201805769

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Concomitance of diverse synaptic plasticity across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable of emulating short-term (STP) and long-term plasticity (LTP) concomitantly are essential. In existing memristors, however, STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, the first demonstration of truly concomitant STP and LTP is reported in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2 O2 Se is used for memristors for the first time, opening up the prospects for ultrathin, high-speed, and low-power neuromorphic devices. The concerted action of STP and LTP allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A heuristic recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the development of generic memristor platforms for highly dynamic neuromorphic computing.
Multistate Resistive Switching with Self-Rectifying Behavior and Synaptic Characteristics in a Solution-processed ZnO/PTAA Bilayer Memristor

SOBIA ALI KHAN,Mehr Khalid Rahmani,Muhammad Umair khan,Jungmin Kim,Jinho Bae,Moon Hee Kang

DOI: https://doi.org/10.1149/1945-7111/ac7754

IF: 3.9

2022-06-10

Journal of The Electrochemical Society

Abstract:The progress of artificial synaptic devices is vital to the realization of the consciousness of effectual bioinspired neuromorphic computing systems. In this study, we fabricated an ITO/ZnO/PTAA/Ag artificial synaptic memristor based on a low-cost solution process. The fabricated device exhibited uniform gradual bipolar resistive switching with excellent endurance and self-rectifying behavior owing to the bilayer heterojunction structure of ZnO/PTAA. The growth of the conducting filament can be efficiently controlled by modulating the current compliance and voltage during the SET process. Modification of conductance states was also observed by simulations to stimuli, which are essential for synaptic function in neuromorphic computing. Various pulse measurements were performed to mimic synaptic behaviors, including long-term potentiation, long-term depression, spike-rate-dependent plasticity, paired-pulse facilitation, and post-tetanic potentiation. Moreover, we reveal that the real device shows an approximately similar pattern recognition rate as the ideal device owing to a more uniform conductance update.

electrochemistry,materials science, coatings & films
Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

Qiufan Liao,Yan Wang,Ziyu Lv,Ziyu Xiong,Jinrui Chen,Guo Ping Wang,Su-Ting Han,Ye Zhou

DOI: https://doi.org/10.1016/j.orgel.2021.106062

IF: 3.868

2021-03-01

Organic Electronics

Abstract:Electronic synapses implementing in-memory computing system could overcome the developing limitation on the energy efficiency of traditional von Neumann architecture. Compared with the high sensitivity of biological synapses, lower responsivity of the memristive synapses was found via the electrical stimulations. Here, poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6- tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)-dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl} (PDPPBTT)/zinc oxide (ZnO) based heterojunction is found to exhibit stable memristive switching behavior, which originates from the confined formation/rupture of filament in the two-layer interface region as the ions migrate with different transport rates in two layers. The implementing synaptic functions in the sensitive memristive device can realize the short-term plasticity and long-term plasticity when stimulated by the applied electrical signals with different stimulating rate. Similar to the biological synapse, the memory loss, memory transition, and the critical role of stimulation rate on the transition process, can be achieved in the as-prepared memristor device. The systematic demonstrations on the synaptic emulation may facilitate building bio-inspired device-level neuromorphic systems.

materials science, multidisciplinary,physics, applied
Co-existence of bipolar nonvolatile and volatile resistive switching based on WO 3 nanowire for applications in neuromorphic computing and selective memory

Ling Qin,Siqi Cheng,Bingyang Xie,Xianhua Wei,Wenjing Jie

DOI: https://doi.org/10.1063/5.0113433

IF: 4

2022-08-29

Applied Physics Letters

Abstract:A two-terminal memristor can be used for information memory and logic operation as well as serving as an artificial synapse for neuromorphic computing. Selective memory with some enjoyable information to be remembered and other to be screened out can be emulated by an artificial synapse. In this work, a memristor based on a single WO 3 nanowire can be constructed, which demonstrates the co-existence of bipolar nonvolatile and volatile resistive switching (RS) behaviors that can be tuned by the amplitude of the operation voltage. For small operation voltages (2 V), the device demonstrates nonvolatile analog RS, which can be utilized as an artificial synapse with long- and short-term plasticity. The learning–forgetting experience of human can be emulated based on the artificial synapse. Moreover, the artificial synapse can be used for image recognition with the recognition accuracy up to 94% for small hand-written image. On the other hand, volatile RS can be observed with large operation voltages (6 V). Furthermore, based on the diverse nonvolatile and volatile RS behaviors, selective memory can be emulated. Our fabricated memristor can be used as an artificial synapse to achieve image recognition and to emulate selective memory, which paves a way to construct smart neuromorphic systems facing complex information.

physics, applied
Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications

Xiaofei Dong,Hao Sun,Siyuan Li,Xiang Zhang,Jiangtao Chen,Xuqiang Zhang,Yun Zhao,Yan Li

DOI: https://doi.org/10.1063/5.0206100

IF: 4.304

2024-04-15

The Journal of Chemical Physics

Abstract:Integrating both electrical and light-modulated multi-type neuromorphic functions in a single synaptic memristive device holds the most potential for realizing next-generation neuromorphic systems, but is still challenging yet achievable. Herein, a simple bi-terminal optoelectronic synaptic memristor is newly proposed based on kesterite Cu2ZnSnS4, exhibiting stable nonvolatile resistive switching with excellent spatial uniformity and unique optoelectronic synaptic behaviors. The device demonstrates not only low switching voltage (−0.39 ± 0.08 V), concentrated Set/Reset voltage distribution (<0.08/0.15 V), and long retention time (>104 s) but also continuously modulable conductance by both electric (different width/interval/amplitude) and light (470–808 nm with different intensity) stimulus. These advantages make the device good electrically and optically simulated synaptic functions, including excitatory and inhibitory, paired-pulsed facilitation, short-/long-term plasticity, spike-timing-dependent plasticity, and “memory-forgetting” behavior. Significantly, decimal arithmetic calculation (addition, subtraction, and commutative law) is realized based on the linear conductance regulation, and high precision pattern recognition (>88%) is well achieved with an artificial neural network constructed by 5 × 5 × 4 memristor array. Predictably, such kesterite-based optoelectronic memristors can greatly open the possibility of realizing multi-functional neuromorphic systems.

chemistry, physical,physics, atomic, molecular & chemical
Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

Chuan Yu Han,Sheng Li Fang,Yi Lin Cui,Weihua Liu,Shi Quan Fan,Xiao Dong Huang,Xin Li,Xiao Li Wang,Guo He Zhang,P. T. Lai,Jia Liu,Xianjie Wan,Zhou Yu,Li Geng,Wing Man Tang

DOI: https://doi.org/10.1002/aelm.202300018

IF: 6.2

2023-04-19

Advanced Electronic Materials

Abstract:A configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron by controlling the forming compliance current (FCC). When FCC ≤ 2 mA, the memristors exhibit the resistive‐switching property, enabling multiple types of synaptic plasticity. When FCC ≥ 3 mA, the memristors show the threshold switching property with excellent endurance (>1012), thus achieving various neuronal functions. For the first time, a configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron after fabrication by controlling the forming compliance current (FCC). When the FCC ≤ 2 mA, the memristors exhibit the resistive‐switching (RS) property, enabling multiple types of synaptic plasticity, including short‐term potentiation, paired‐pulse facilitation, short‐term memory, and long‐term memory. When the FCC ≥ 3 mA, the memristors can be electroformed and exhibit the threshold switching (TS) property with excellent endurance (>1012), thus achieving various biological neuron characteristics, such as threshold‐triggering, strength‐modulation of spike frequency, and leaky integrate‐and‐fire. This enables the successful implementation of a spiking Pavlov's dog that employs the spikes as information carrier by connecting an RS NbOx memristor as artificial synapse and a TS memristor as artificial neuron in series. Furthermore, a fully NbOx memristors‐based single‐layer spiking neural network is simulated. It is first found that, due to the forgetting property of synapse, the recognition accuracy for the Modified National Institute of Standards and Technology handwritten digits is increased from 85.49% to 91.45%. This study provides a solid foundation for the development of neuromorphic machines based on the principles of the human brain.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Phase-Change Nanoclusters Embedded In A Memristor For Simulating Synaptic Learning

Qin Wan,Fei Zeng,Jun Yin,Yiming Sun,Yuandong Hu,Jialu Liu,Yingcong Wang,Guoqi Li,Dong Guo,Feng Pan

DOI: https://doi.org/10.1039/c8nr09765h

IF: 6.7

2019-01-01

Nanoscale

Abstract:A type of memristor with a structure of Pd/Nb:AlNO/Pd was designed and fabricated in this work. Its filaments are embedded by phase-change NbO nanoclusters confirmed by the analysis of cross-sectional profiles. The resistive switching mechanism includes the contribution of oxygen vacancy (V-O) migration and the structural evolution of phase-change nanoclusters. The system experiences two types of kinetics under external stimulations to replicate the critical dynamics in real synapses: V-O migration corresponding to the dynamics of the Ca2+ flux and transmitter release at the pre-synapse, and the phase change of the NbO nanoclusters corresponding to the ionic flux modulated by the post-synaptic potential (current). It was found that the memristor can respond to a set of pulse stimulations in a pattern containing a slow linear increase term and a periodic oscillation term, suggesting that the output signals might be encoded. The simulation of long-term plasticity indicates that the memristor is suitable for diverse learning protocols, including spike-rate dependent plasticity and spike-timing-dependent plasticity. Our work proposes an elementary cell that closely approximates biological synapses and is usable for brain-like computing.
A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Cheng-Chih Hsieh,Anupam Roy,Yao-Feng Chang,Davood Shahrjerdi,Sanjay K. Banerjee

DOI: https://doi.org/10.1063/1.4971188

2016-03-13

Abstract:Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks.

Mesoscale and Nanoscale Physics
Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104

Fengxia Yang,Wenbin Wei,Xiaofei Dong,Yun Zhao,Jiangtao Chen,Jianbiao Chen,Xuqiang Zhang,Yan Li

DOI: https://doi.org/10.1063/5.0167187

IF: 4.304

2023-09-15

The Journal of Chemical Physics

Abstract:Optoelectronic memristors hold the most potential for realizing next-generation neuromorphic computation; however, memristive devices that can integrate excellent resistive switching and both electrical-/light-induced bio-synaptic behaviors are still challenging to develop. In this study, an artificial optoelectronic synapse is proposed and realized using a kesterite-based memristor with Cu2ZnSn(S,Se)4 (CZTSSe) as the switching material and Mo/Ag as the back/top electrode. Benefiting from unique electrical features and a bi-layered structure of CZTSSe, the memristor exhibits highly stable nonvolatile resistive switching with excellent spatial uniformity, concentrated Set/Reset voltage distribution (variation <0.08/0.02 V), high On/Off ratio (>104), and long retention time (>104 s). A possible mechanism of the switching behavior in such a device is proposed. Furthermore, these memristors successfully achieve essential bio-synaptic functions under both electrical and various visible light (470–655 nm) stimulations, including electrical-induced excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, long-term depression, spike-timing-dependent plasticity, as well as light-stimulated short-/long-term plasticity and learning-forgetting-relearning process. As such, the proposed neotype kesterite-based memristor demonstrates significant potential in facilitating artificial optoelectronic synapses and enabling neuromorphic computation.

chemistry, physical,physics, atomic, molecular & chemical
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Sobia Ali Khan,Geun Ho Lee,Chandreswar Mahata,Muhammad Ismail,Hyungjin Kim,Sungjun Kim

DOI: https://doi.org/10.3390/nano11020315

IF: 5.3

2021-01-27

Nanomaterials

Abstract:In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the cross-point array structure than the BRS mode due to more nonlinear I–V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing

Nan He,Fan Ye,Jun Liu,Tianlong Sun,Xinpeng Wang,Wenjie Hou,Weijing Shao,Xiang Wan,Yi Tong,Feng Xu,Yang Sheng

DOI: https://doi.org/10.1002/aelm.202201038

IF: 6.2

2022-12-24

Advanced Electronic Materials

Abstract:Multifunctional memristors coexisting non‐volatile memory and volatile threshold switching behaviors are introduced based on an innovative Ag–In–Zn–S/Cs3Cu2Cl5 heterostructure. The device is capable of imitating essential biological synaptic functions and conditioning Pavlov's dog experiment. The resulting high classification accuracies for small and large digits datasets are achieved via a three‐layer neural network training based on the experimentally measured device's conductance states. Lead‐free all‐inorganic Cs3Cu2Cl5 perovskites, a member of the metal‐metal halide material family, have attracted pronounced attention owing to their low toxicity, facile fabrication strategies, considerable ambient stability, and intriguing photoelectric properties. However, the application of environmentally friendly copper‐based Cs3Cu2Cl5 in memristors has been rarely reported to the authors' knowledge. Herein, multifunctional memristors with the coexistence of non‐volatile memory (MS) and volatile threshold switching (TS) behaviors are introduced based on an innovative Ag–In–Zn–S/Cs3Cu2Cl5 heterostructure. The inserted Ag–In–Zn–S quantum dots layer may provide an effective method for guiding the formation of the dominant metallic Ag filaments, resulting in considerably stable and controllable multiple switching behaviors. Additionally, the heterostructure memristor is capable of imitating some essential biological synaptic functions, including long‐term potentiation (LTP), long‐term depression (LTD), and the short‐term memory (STM) to long‐term memory (LTM) transition. Furthermore, the famous conditioning Pavlov's dog experiment corresponding to associative learning is electronically simulated by the studied device. Moreover, utilizing the devices' LTP and LTD properties, relatively high recognition accuracies for small and large digits datasets are achieved through a three‐layer artificial neural network, revealing the feasibility of implementing neuromorphic computation using heterostructure memristors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nociceptor‐Enhanced Spike‐Timing‐Dependent Plasticity in Memristor with Coexistence of Filamentary and Non‐Filamentary Switching

Dongyeol Ju,Jungwoo Lee,Sungjun Kim

DOI: https://doi.org/10.1002/admt.202400440

IF: 6.8

2024-05-21

Advanced Materials Technologies

Abstract:A bilayer‐structured memristor has been developed, showcasing reliable resistive switching in both filamentary and non‐filamentary modes. This memristor displays diverse capabilities, serving as a unified entity capable of reservoir computing, emulating artificial nociceptors, and functioning as a synapse. Through the application of Hebbian learning rules, it facilitates the comprehension of how external pain influences variations in brain activity. In the era of big data, traditional computing architectures face limitations in handling vast amounts of data owing to the separate processing and memory units, thus causing bottlenecks and high‐energy consumption. Inspired by the human brain's information exchange mechanism, neuromorphic computing offers a promising solution. Resistive random access memory devices, particularly those with bilayer structures like Pt/TaOx/TiOx/TiN, show potential for neuromorphic computing owing to their simple design, low‐power consumption, and compatibility with existing technology. This study investigates the synaptic applications of Pt/TaOx/TiOx/TiN devices for neuromorphic computing. The unique coexistence of nonfilamentary and filamentary switching in the Pt/TaOx/TiOx/TiN device enables the realization of reservoir computing and the functions of artificial nociceptors and synapses. Additionally, the linkage between artificial nociceptors and synapses is examined based on injury‐enhanced spike‐time‐dependent plasticity paradigms. This study underscores the Pt/TaOx/TiOx/TiN device's potential in neuromorphic computing, providing a framework for simulating nociceptors, synapses, and learning principles.

materials science, multidisciplinary
Engineering the Synaptic Kinetic Process into Memristive Device

Ziyang Zhang,Yaoyuan Wang,Huanglong Li,Yujie Wu,Guanrui Wang,Luping Shi

DOI: https://doi.org/10.1002/aelm.201800096

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:The important synaptic functionalities, such as long-term memory, short-term memory, and experience-dependent learning, are extensively emulated by the emerging memristive devices, which provide a main step toward brain inspired computing. The majority of the electronic synapses based on memristors usually focus on the emulation of the physiological behaviors at the cellular level. However, the research on the subcellular synaptic dynamic properties of electronic synapses is rarely reported. In this article, Ag/Ta2O5/Pt-based memristors are utilized to emulate both the long-term memory and short-term facilitation of biological synapse. Under pulse-train measurements, the device exhibits short-term facilitation depending on varying the electrical pulse intensity, duration, and frequency. Based on the experimental results, one-to-one correspondence is established between the filament dynamics in our device and the subcellular synaptic dynamics during short-term facilitation. By fitting the experimental results into the biological model, the dynamic displacements of the rear and head ends of the Ag filament are drawn analogy to the neurotransmitter and Ca2+ dynamics. The dynamic process is explained by simulations of the nanoparticle dynamics in which the Ag filament is simplified to a 1D "stick." This research enables the emulation of synaptic function with improved biofidelity and broad applications to neuromorphic computing.
Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Caidie Cheng,Yiqing Li,Teng Zhang,Yichen Fang,Jiadi Zhu,Keqin Liu,Liying Xu,Yimao Cai,Xiaoqin Yan,Yuchao Yang,Ru Huang

DOI: https://doi.org/10.1063/1.5037962

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:Neuromorphic engineering offers a promising route toward intelligent and low power computing systems that may find applications in artificial intelligence and the Internet. Construction of neuromorphic systems, however, requires scalable nanodevices that could implement the key functionalities of biological synapses. Here, we demonstrate an artificial synaptic device consisting of a Ti/yttria-stabilized-zirconia (ZrO2:Y)/Pt memristive structure, where the loss microstructure, high oxygen vacancy concentration, and resultant high ionic conductivity in ZrO2:Y facilitate the oxygen vacancy migration and filament evolution in the devices, leading to a bipolar artificial synapse with low forming and operation voltages. As the thickness of ZrO2:Y film increases, a transition from bipolar to unipolar resistive switching was observed, which can be ascribed to the competing vertical and radial ion transport dynamics. The emergence of unipolar switching has in turn allowed the device to exhibit metaplasticity, a history dependent plasticity that is important for memory and learning functions. This work thus demonstrates on-demand manipulation of ionic transport properties for building synaptic elements with rich functionalities.

A Balanced Scorecard for Canadian Hospitals

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Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104