Abstract:The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the common trend of reduced ferroelectric ordering at the nanoscale, and the mechanism that stabilizes the ferroelectric phase (absent in hafnia phase diagram) presents significant challenges to traditional knowledge of ferroelectricity. In this work, we show that the formation of the orthorhombic ferroelectric phase (o-FE, space group Pca21) of the single-crystalline epitaxial films of 10% La-doped HfO2 (LHO) on (111)-oriented yttria stabilized zirconia (YSZ) relies on the stability of the high-pressure orthorhombic antiferroelectric phase (o-AFE, space group Pbca). Our detailed structural characterizations demonstrate that as-grown LHO films represent largely the o-AFE phase being thermodynamically stabilized by the compressive strain. Our Kelvin probe force microscopy studies show, under mechanical poling, the o-AFE phase is converted to the o-FE phase which remains stable under ambient conditions. We find that the orthorhombic phase stability is enhanced in thinner films down to one-unit-cell thickness, a trend that is unknown in any other ferroelectric films. This is due to the vanishing depolarization field of the o-AFE phase and the isomorphic LHO/YSZ interface, supporting strain-enhanced ferroelectricity in the ultrathin films. This results in an unprecedented increase of the Curie temperature up to 850 °C, the highest reported for sub-nanometer-thick ferroelectrics. Overall, our findings opens the way for advanced engineering of hafnia-based materials for ferroelectric applications and heralding a new frontier of high-temperature ferroelectrics at the two-dimensional limit.

Emergent superconductivity in doped ferroelectric hafnia

Ferroelectricity in hafnia controlled via surface electrochemical state

Ferroelectric hafnia as an ionic conductor

Phase transitions in typical fluorite-type ferroelectrics

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Ferroelectricity in the Al doped HfO2

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

A large modulation of electron-phonon coupling and an emergent superconducting dome in doped strong ferroelectrics

Phase transitions in HfO2 probed by first-principles computations

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Engineering ferroelectricity in monoclinic hafnia

Effect of Dopant Ordering on the Stability of Ferroelectric Hafnia

Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia

Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia

Ferroelectric hafnia as an intrinsic ionic conductor

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Ferroelectricity in HfO 2 from a Coordination Number Perspective

Polarization description of successive ferroelectric switching in hafnia

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ultralarge polarization in ferroelectric hafnia-based thin films