Abstract:Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

Optical readout of the chemical potential of two-dimensional electrons

High spatial resolution charge sensing of quantum Hall states

Optical Imaging of Charges with Atomically Thin Molybdenum Disulfide

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

Optical quantification of the weak van der Waals coupling between multilayer antimonene and bilayer MoS2 using ultrafast coherent vibration spectroscopy

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Harnessing excitons at the nanoscale -- photoelectrical platform for quantitative sensing and imaging

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions

Nanoscale Conductivity Imaging of Correlated Electronic States in WSe 2 / WS 2 Moiré Superlattices

Measurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré Superlattice

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Simultaneous measurement of anisotropic thermal conductivity and thermal boundary conductance of 2-dimensional materials

Probing Quantum Phases in Ultra-High-Mobility Two-Dimensional Electron Systems Using Surface Acoustic Waves

Quantifying carrier density in monolayer MoS2 by optical spectroscopy

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer