Abstract:Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection of type-X magnetization reversal is still elusive, unlike type-Z switching, which employs DC-based anomalous Hall effect measurement. Here, we, demonstrated that the odd planar Hall signal (O-PHV) exhibits an odd symmetry with the application of an external magnetic field which motivates us to develop a reading mechanism for detecting magnetization switching of in-plane magnetized type-X devices. We verified our DC-based reading mechanism in the Pt/Co/NiFe/Pt stack where a thin Co layer is inserted to create dissimilar interfaces about the NiFe layer. Remarkably, the current-induced in-plane fields are found to be significantly large in Pt/Co/NiFe/Pt stack. Further, we successfully employed the O-PHV method to detect the current-induced magnetization switching. The pure DC nature of the writing and reading mechanism of our proposed type-X detection technique through O-PHV makes it the easiest in-plane magnetization detection technique. Moreover, the high repeatability and easy detection of our proposed method will open new avenues toward in-plane SOT switching based memory devices and sensors.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Develop a simple and universal method to detect Type - X devices with in - plane magnetization switching**. Specifically, Type - X devices have attracted wide attention in the field of spintronics due to their strong spin - orbit torque (SOT) - induced magnetization switching and easy - to - deposit technology. However, unlike Type - Z devices, there is no generally applicable and simple method for detecting the magnetization switching of Type - X devices yet. Currently, Type - Z devices can detect magnetization switching through direct - current (DC) - based Anomalous Hall Effect (AHE) measurements, while the detection of Type - X devices depends on more complex techniques, such as the differential planar Hall effect or the AC 2nd Harmonic technique, and these methods have certain limitations. To solve this problem, the author proposes a new method based on the Odd Planar Hall Voltage (O - PHV). By performing DC measurements under the application of an external DC magnetic field, the detection of in - plane magnetization switching in Type - X devices is achieved. This method not only simplifies the detection process but also improves the sensitivity and reliability of the detection signal. ### Main contributions: 1. **Propose the O - PHV method**: By measuring the Odd Planar Hall Voltage, the magnetization switching in Type - X devices can be effectively detected. 2. **Verify the effectiveness of the O - PHV method**: Experimental verification was carried out in a Pt/Co/NiFe/Pt multilayer film structure, demonstrating the feasibility and superiority of this method. 3. **Demonstrate current - induced magnetization switching**: By applying a current pulse, the current - induced magnetization switching was successfully detected, and the high repeatability of this method was verified. ### Formula summary: - Expression of the planar Hall voltage: \[ V_H = V_{AH} + V_{PH} = I\Delta R_{AH}m_z + I\Delta R_{PH}m_xm_y \] - In the case of in - plane magnetization, ignoring the vertical component: \[ V_H\approx V_{PH} = I\Delta R_{PH}\cos\phi\sin\phi \] - Change in the planar Hall voltage after applying current: \[ V_H\approx V_{PH} = I\Delta R_{PH}\left[\frac{\sin^2\phi_0}{2}+\Delta\phi\cos 2\phi_0-\frac{\sin^2\phi_0}{2}(\Delta\phi)^2\right] \] - Odd - symmetric planar Hall voltage (O - PHV): \[ \Delta V_H = V_H( + I)+ V_H( - I)= 2I^2\Delta R_{PH}\cos^2\phi_0\frac{\partial\phi}{\partial H_I}\frac{\partial H_I}{\partial I} \] Through these formulas and experimental results, the author shows the advantages of the O - PHV method in detecting the magnetization switching of Type - X devices.

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