Abstract:They developed a method to create highly efficient collinear spin currents by altering interfacial symmetry, achieving 100% field‐free switching in CoFeB multilayers. This switching, driven by a planar spin Hall effect, is facilitated by changes in interface symmetry. Their approach overcomes material symmetry limits, offering a new path for controlling spin orbit torque and advancing energy‐efficient spintronic devices. Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high‐density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current‐induced field‐free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates. This field‐free switching is primarily driven by the out‐of‐plane anti‐damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation‐determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out‐of‐plane spin polarization along the collinear direction of the spin‐current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin–orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy‐efficient spintronic devices technology.

Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Anomalous Inverse Spin Hall Effect (AISHE) due to Unconventional Spin Currents in Ferromagnetic Films with Tailored Interfacial Magnetic Anisotropy

Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators.

Observation of the In-plane Anomalous Hall Effect induced by Octupole in Magnetization Space

All-electrical Detection of Spin Dynamics in Magnetic Antidot Lattices by the Inverse Spin Hall Effect

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd 3

Anomalous Hall Magnetoresistance in a Ferromagnet.

Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Sensitive measurement of spin-orbit torque driven ferromagnetic resonance detected by planar Hall geometry