Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Dirk König,Michael Frentzen,Daniel Hiller,Noël Wilck,Giovanni Di Santo,Luca Petaccia,Igor Pìs,Federica Bondino,Elena Magnano,Joachim Mayer,Joachim Knoch,Sean C. Smith

DOI: https://doi.org/10.48550/arXiv.2208.10792

2022-08-23

Abstract:The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explain and quantify the NESSIAS effect (Nanoscale Electronic Structure Shift Induced by Anions at Surfaces) observed in Si nanostructures. Specifically, the authors aim to: 1. **Provide a detailed quantum - chemical explanation**: Explain in detail the origin of the NESSIAS effect, especially how the anions involved affect the electronic structure of low - nanoscale (LNS) intrinsic silicon (i - Si) embedded in silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). 2. **Establish a semi - quantitative description**: Derive an analytical parameter \(\Lambda\) to predict the highest occupied molecular orbital energy (HOMO) of Si nanocrystals (NCs) and verify its accuracy. 3. **Experimental verification**: Measure the conduction - band and valence - band edge energies \(E_C\) and \(E_V\) of Si nanowells (NWells) embedded in different media by experimental means such as X - ray absorption spectroscopy (XAS - TFY) and ultraviolet photoelectron spectroscopy (UPS) to verify the theoretical model. 4. **Application prospects**: Demonstrate how the p/n structure generated by the NESSIAS effect can eliminate the influence of impurity doping, providing possibilities for ultra - small undoped Si electronic devices, especially those with shorter physical gate lengths and CMOS - compatible materials. ### Main problem summary - **Origin of the NESSIAS effect**: Explain why LNS i - Si shifts to higher binding energy when embedded in SiO₂, and shifts to lower binding energy when embedded in Si₃N₄. - **Quantitative description**: Quantify this effect by introducing the parameter \(\Lambda\) and verify its applicability in different sizes and types of Si nanostructures. - **Experimental verification and application**: Verify the theoretical model with experimental data and explore its potential applications in VLSI electronic devices, especially how to use the NESSIAS effect to design new semiconductor devices. Through these studies, the paper not only provides an in - depth understanding of the NESSIAS effect, but also provides a theoretical and experimental basis for future nanoscale electronic device design.

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

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