Elucidating dislocation core structures in titanium nitride through high-resolution imaging and atomistic simulations

J. Salamania,D.G. Sangiovanni,A. Kraych,K.M. Calamba Kwick,I.C. Schramm,L.J.S. Johnson,R. Boyd,B. Bakhit,T.W. Hsu,M. Mrovec,L. Rogström,F. Tasnádi,I.A. Abrikosov,M. Odén

DOI: https://doi.org/10.1016/j.matdes.2022.111327

2022-10-29

Abstract:Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterized thin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. By high-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besides the expected primary full a/2{110}<1$\bar{1}$0> dislocation, Shockley partial dislocations a/6{111}<11$\bar{2}$> and sessile Lomer edge dislocations a/2{100}<011>. Density-functional theory and classical interatomic potential simulations complement STEM observations by recovering the atomic structure of the different dislocation types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core. The generated models of the dislocation cores suggest locally enhanced metal-metal bonding, weakened Ti-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}<1$\bar{1}$0> and {111}<11$\bar{2}$> dislocations. Our findings underscore that the presence of different dislocation types and their effects on chemical bonding should be considered in the design and interpretations of nanoscale and macroscopic properties of TiN.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the lack of detailed knowledge of the dislocation core structure in titanium nitride (TiN). Although TiN is a widely studied and characterized thin - film ceramic material, the specific understanding of its related dislocation core structures remains insufficient. By imaging single - crystal (001) - oriented TiN films with high - resolution scanning transmission electron microscopy (STEM), the researchers identified different dislocation types and their core structures. These dislocation types include the expected dominant a/2{110}⟨11̅0⟩ dislocations, Shockley partial dislocations a/6{111}⟨112̅⟩, and sessile Lomer edge dislocations a/2{100}⟨011⟩. To more comprehensively understand the core structures of these dislocations, the researchers also combined density functional theory (DFT) and classical inter - atomic potential simulations to recover the atomic structures of different dislocation types, estimate the Peierls stress, and provide insights into the nature of chemical bonding at the core. These models revealed locally enhanced metal - metal bonding, weakened Ti - N bonding, and N - vacancy pinning effects, which effectively reduce the mobilities of {110}⟨11̅0⟩ and {111}⟨112̅⟩ dislocations. The research results emphasize that different dislocation types and their effects on chemical bonding should be considered when designing and interpreting the nanoscale and macroscopic properties of TiN.

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