Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization

Maneesha Narayanan,Ajinkya Punjal,Emroj Hossain,Shraddha Choudhary,Ruta Kulkarni,S S Prabhu Arumugam Thamizhavel,Arnab Bhattacharya

DOI: https://doi.org/10.48550/arXiv.2203.04941

2022-03-10

Abstract:We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to change the electrical and optical properties of β - Ga₂O₃ single crystals by introducing vanadium (V) doping, especially to increase their resistivity, and to study their potential applications in the terahertz (THz) band. Specifically:

1. **Synthesis of vanadium - doped β - Ga₂O₃ single crystals with high resistivity**: Traditional n - type vanadium - doped β - Ga₂O₃ has a relatively high free - carrier concentration (about \(10^{18} \, \text{cm}^{-3}\)), which limits its use in certain applications. In this study, vanadium - doped β - Ga₂O₃ single crystals with extremely high resistivity were successfully synthesized by precisely controlling the growth parameters.

2. **Study of the influence of vanadium doping on the optical properties of β - Ga₂O₃ crystals**: Compared with undoped or n - type - doped crystals, vanadium - doped β - Ga₂O₃ crystals exhibit significantly different optical properties, especially the birefringence phenomenon in the terahertz band.

3. **Exploration of the potential of vanadium - doped β - Ga₂O₃ crystals in terahertz applications**: Research shows that vanadium - doped β - Ga₂O₃ crystals exhibit strong birefringence characteristics in the range of 0.2 to 2.6 THz, and the refractive index contrast at 1 THz is \(\Delta n = |0.3 \pm 0.02|\), which makes it an ideal candidate material for terahertz applications, such as single - wavelength quarter - wave plates, half - wave plates, segmented wave plates, and Faraday rotators, etc.

### Main Conclusions
- Vanadium doping significantly changes the electrical and optical properties of β - Ga₂O₃, especially introducing deep - level states, resulting in non - radiative recombination paths and suppressing photoluminescence.
- Vanadium - doped β - Ga₂O₃ crystals exhibit strong birefringence characteristics in the terahertz region, and the refractive index contrast reaches \(\Delta n = |0.3 \pm 0.02|\).
- These properties make it a highly potential material in terahertz applications.

### Related Formulas
- The calculation formula for the refractive index \(n(\omega)\):
\[
n(\omega)=1 - \frac{c}{\omega d}\phi(\omega)
\]
where \(d\) is the sample thickness, \(c\) is the speed of light in vacuum, \(\omega\) is the frequency, and \(\phi(\omega)\) is the phase of the transmittance.

- The calculation formula for the absorption coefficient \(\alpha(\omega)\):
\[
\alpha(\omega)=2Kk(\omega)
\]
where \(K\) is the wave number, \(k(\omega)\) is the extinction coefficient, which is calculated from the amplitude of the transmittance \(|T(\omega)|\):
\[
k(\omega)=\frac{c}{\omega d}\left[\ln\frac{4n(\omega)}{(n(\omega)+ 1)^2}-\ln|T(\omega)|\right]
\]