Fate of the Remaining Rectal Segment After Subtotal Colectomy for Ulcerative Colitis

C. Mayo,O. A. Fly,Michael E. Connelly

DOI: https://doi.org/10.1097/00000658-195610000-00016

IF: 13.787

1956-10-01

Annals of Surgery

Abstract:

What problem does this paper attempt to address?

Electronic Structure and Optical Property of Metal-Doped Ga2o3: A First Principles Study

Cheng Tang,Jie Sun,Na Lin,Zhitai Jia,Wenxiang Mu,Xutang Tao,Xian Zhao

DOI: https://doi.org/10.1039/c6ra14010f

IF: 4.036

2016-01-01

RSC Advances

Abstract:The difficulty in fabricating p-type Ga2O3 is a crucial issue which restricts its applications in practical devices. In the present work, we have performed first principles studies on formation energies, electronic structures and optical properties for a series of metal doped beta-Ga2O3, involving a long list of main group and transition metals, even some lanthanides, to search for potential p-type dopants. Calculations have shown that Li and Be, both with small atomic radius, prefer interstitial doping rather than substitutional doping of Ga, resulting eventually in an n-type character to the doped system. In addition, an O-rich atmosphere is more favorable for p-type substitutional dopings by comparison with the Ga-rich condition. A number of metal dopants show potential in achieving p-type beta-Ga2O3, for example, Na, Mg, Ca, Cu, Ag, Zn, Cd, which are all worth a further emphasis study in experiment, although a satisfying holes concentration may only be possible to achieve by simultaneously committing to both the elimination of n-type background carriers and the activation mechanism of dopants. Absorption spectra have shown that all the above-mentioned potential p-type dopants are suitable for deep UV applications. The major peaks of the absorption spectra are red-shifted in most cases, due to the introduction of new states to the forbidden gap by dopants, which have been discussed in detail by inspecting into the partial density of states. Ga2O3 doped by some transition metals show potential as magnetic devices.
Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Kin Man Yu,Chaoping Liu,Chun Yuen Ho,Yishu Foo,M Kamruzzaman,Juan Antonio Zapien,Weiwei Gao,Wladek Walukiewicz

DOI: https://doi.org/10.1109/ICIPRM.2016.7528740

2016-01-01

Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.
Effective P-type N-doped α-Ga2O3 from First-Principles Calculations

H. Zeng,C. Ma,M. Wu

DOI: https://doi.org/10.1007/s10948-024-06741-6

2024-05-21

Journal of Superconductivity and Novel Magnetism

Abstract:The realization of an effective p-type doping in Ga 2 O 3 is crucial for both fundamental science and emerging applications. P-type doping in the β-Ga 2 O 3 phase has been observed tremendously, whereas the researches of p-type features in the allotropy α-Ga 2 O 3 phase are rare. In this work, we study p-type N-doped α-Ga 2 O 3 by first-principles calculations with generalized gradient approximation (GGA) + U method. The N foreigner can easily substitute the O atom in α-Ga 2 O 3 and acts as an effective shallow hole dopant with a modest acceptor ionization level of ~ 0.1 eV. Moreover, the N 3− , N 2+ , and N 3− are the predominant charge states, corresponding to one N impurity substitution of anion O, cation Ga, and the occupancy of the interstitial site in α-Ga 2 O 3 , respectively. N impurity leads to the optical transition from ultraviolet light to visible-infrared range in α-Ga 2 O 3 as suggested by the dielectric function calculations, which can be ascribed to the transition from O 2p orbitals to N 2p orbitals or inter-band transition between the formed holes of N 2p impurity. Our work may provide theoretical guidance for designing p-type N-doped α-Ga 2 O 3 materials and shed light on its application as potential optoelectronic devices.

physics, condensed matter, applied
Electronic transport and optical properties of five different phases (α, β, ε , δ and γ) of Ga2O3: A first-principles study

Jiaqi Ding,Yan Liu,Xiyu Gu,Li Zhang,Xiaodong Zhang,Xiang Chen,Wenjuan Liu,Yao Cai,Shishang Guo,Chengliang Sun

DOI: https://doi.org/10.1016/j.physb.2024.415888

IF: 2.988

2024-03-29

Physica B Condensed Matter

Abstract:In the field of power and ultraviolet devices, Ga 2 O 3 becomes an emerging semiconductor due to its large energy bandgap and suitable optical absorption wavelength at solar blind ultraviolet band. In this work, the electronic and optical properties of five Ga 2 O 3 polymorphs are investigated by the first-principles calculations to study their potential in ultraviolet devices. The geometry structures, electronic structure, optical and electronic transport properties of five polymorphs have been investigated through GGA + U approach and deformation potential theory. Based on the deformation potential theory, the anisotropic electron mobility of five Ga 2 O 3 polycrystals is obtained by analyzing the parameters obtained from the first-principles calculation. TCAD simulations using calculation results before show the spectral response of MSM solar-blind detectors based on five polymorphs, and indicating that ε-Ga 2 O 3 is the best candidate material for solar blind UV detector. This work provides theoretical insights for the preparation of different phase gallium oxide materials and devices.

physics, condensed matter
Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

Hui Zeng,Meng Wu,Meijuan Cheng,Qiubao Lin,Meijuan Chen

DOI: https://doi.org/10.3390/ma16155317

IF: 3.4

2023-07-29

Materials

Abstract:The intrinsic n-type conduction in Gallium oxides (Ga2O3) seriously hinders its potential optoelectronic applications. Pursuing p-type conductivity is of longstanding research interest for Ga2O3, where the Cu- and Zn-dopants serve as promising candidates in monoclinic β-Ga2O3. However, the theoretical band structure calculations of Cu- and Zn-doped in the allotrope α-Ga2O3 phase are rare, which is of focus in the present study based on first-principles density functional theory calculations with the Perdew–Burke–Ernzerhof functional under the generalized gradient approximation. Our results unfold the predominant Cu1+ and Zn2+ oxidation states as well as the type and locations of impurity bands that promote the p-type conductivity therein. Furthermore, the optical calculations of absorption coefficients demonstrate that foreign Cu and Zn dopants induce the migration of ultraviolet light to the visible–infrared region, which can be associated with the induced impurity 3d orbitals of Cu- and Zn-doped α-Ga2O3 near the Fermi level observed from electronic structure. Our work may provide theoretical guidance for designing p-type conductivity and innovative α-Ga2O3-based optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Investigation on the optical and electrical performance of aluminium doped gallium oxide thin films

P. Mandal,S. Roy,U. P. Singh

DOI: https://doi.org/10.1007/s11082-022-03851-0

IF: 3

2022-06-27

Optical and Quantum Electronics

Abstract:Gallium oxide is an extensively researched wide band gap material that has numerous applications in optoelectronic devices. This article focuses on fabrication of amorphous gallium oxide (a-gallium oxide) deposited by RF plasma sputtering at low temperature on glass substrates to fabricate large area flexible electronics. Particularly, this work aims to improve their optical and electrical performances by metal doping as well as substrate pre-heating. Here, the properties of 9.5% aluminium doped a-Ga 2 O 3 and 6.1% europium doped a-Ga 2 O 3 , grown by co-sputtering on soda lime glass substrate at 400 °C were analyzed. The thin films produced were nano-structured with an average grain size of ~ 12 nm. The maximum optical transmittance in the UV–vis range for 9.5% Al and 6.1% Eu doped a-Ga 2 O 3 is 82% and 84%, respectively. Although the variations in optical band gap are not appreciable with doping Al and Eu to undoped a-Ga 2 O 3 ~ 3.98 eV, their electronic properties show tremendous difference. Hall effects measurements show that by doping with 9.5% Al, the a-gallium oxide thin films record an increase in both mobility and conductivity of 2 orders. On the other hand, the 6.1% Eu doped a-Ga 2 O 3 does not show any appreciable change in both mobility and conductivity. This was further investigated through first principle density function theory (DFT) to correlate the structure to its properties for both the dopants. Therefore, aluminium doping in a-gallium oxide shows potential towards its application in flexible and cheaper electronic devices.

engineering, electrical & electronic,optics,quantum science & technology
Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Jueli Shi,D. Qi,Jiaye Zhang,K. H. Zhang,Lang Chen

DOI: https://doi.org/10.1063/1.5142999

IF: 6.6351

2020-02-01

APL Materials

Abstract:Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of Ga2O3 in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with In2O3 and Al2O3 will be discussed.

Physics,Engineering,Materials Science
First principles investigation of photoelectric properties of Ga 2 O 3 Doped with group IV elements (Si,Ge,Sn)

Miao Yu,Bo Peng,Kai Sun,Jiangang Yu,Lei Yuan,Jichao Hu,Yuming Zhang,Renxu Jia

DOI: https://doi.org/10.1016/j.mtcomm.2022.105127

IF: 3.8

2023-03-01

Materials Today Communications

Abstract:As a new-generation wide-bandgap semiconductor material that has attracted much attention in recent years, gallium oxide (Ga 2 O 3 ) usually needs to be doped to control the carriers for improving its optoelectronic properties. Although the n-type doping of Ga 2 O 3 has been realized by using group IV elements as dopants, comparative studies on the effects of different impurity elements on the photoelectrical properties of Ga 2 O 3 are still lacking. Therefore, we conducted a systematic comparative study on the doping of silicon, germanium and tin in Ga 2 O 3 . The lattice distortion, electron local function, formation energy, the density of state, absorption spectrum, mobility, non-radiative capture rate and transmission spectrum of nanodevices and so on are calculated in this manuscript. In brief, among silicon, germanium and tin elements, germanium doping Ga 2 O 3 has the smallest lattice distortion, the largest mobility, the largest conductivity, the smallest capture rate of electrons, and a relatively small absorption edge blue shift. Therefore, germanium doping is more suitable for the application of Ga 2 O 3 in photoelectrical field. Our work also provides certain guidance and theoretical support for subsequent researchers in the selection of Ga 2 O 3 dopants.

materials science, multidisciplinary
Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Anuj Goyal,Andriy Zakutayev,Vladan Stevanović,Stephan Lany

DOI: https://doi.org/10.1063/5.0051788

2021-03-31

Abstract:Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices.

Materials Science
Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Fenhong Liu,Yonghui Li,Hongwei Cheng,Chao Jin,Changlong Liu

DOI: https://doi.org/10.1002/adom.202400724

IF: 9

2024-05-01

Advanced Optical Materials

Abstract:High‐quality epitaxial β‐(AlxGa1‐x)2O3 films are grown by RF magnetic sputtering. The Al content in β‐(AlxGa1‐x)2O3 can tune the energy bandgap increased up to 6.10 eV. The Ga d states of DOS calculated by DFT are redistributed along valence to conduction bands by abundant introduced Al p states. These results provide potential application of β‐(AlxGa1‐x)2O3 in photonic devices. Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

materials science, multidisciplinary,optics
Advancing Understanding of Structural, Electronic, and Magnetic Properties in 3D-Transition-metal TM-doped Α-Ga2o3 (TM = V, Cr, Mn, and Fe): A First-Principles and Monte Carlo Study

Bo Peng,Miao Yu,Kai Sun,Lei Yuan,Yuming Zhang,Shuai Yang,Linpeng Dong,Renxu Jia

DOI: https://doi.org/10.1063/5.0173544

IF: 2.877

2023-01-01

Journal of Applied Physics

Abstract:In this paper, we investigated the properties of transition metal (TM)-doped α-Ga2O3 using first-principles calculations and Monte Carlo simulations. α-Ga2O3 is a wide-bandgap semiconductor material with enhanced performance and lower fabrication costs on sapphire substrates compared to β-Ga2O3. Doping with TMs can modify electrical transport, optical absorption, and magnetic properties, yet theoretical studies on this are scarce. Our study focused on V, Cr, Mn, and Fe impurities. We introduced a newly proposed scheme for efficiently determining the ground-state defect configuration during structural relaxation. We adopt a recent, novel image charge correction method to accurately calculate formation enthalpy and thermodynamic transition levels for spin-polarized transition metal ion doping, without employing the empirical dielectric constant. Results showed Cr ions tend to neutral substitutional Ga, while V, Mn, and Fe impurity ions tend to carry a negative charge in common n-type α-Ga2O3. Magnetic moments and spin-splitting impurity levels primarily arise from transition metal impurities and their d orbitals. We used the generalized four-state method to calculate exchange interaction constants between substitution lattice sites and identified (anti) ferromagnetic couplings at specific distances in a 120-atom supercell, which are negligible in total energy calculations. Monte Carlo simulations indicated a Curie temperature of 360 K in n-type α-Ga2O3: Mn system with 12.5% doping, suggesting intrinsic ferromagnetic ordering based on the Heisenberg model. Our study contributes to understanding TM-doped α-Ga2O3 electronic structure and magnetic properties through improved methodologies. The approach can be applied in research involving other TM-doped oxides or wide-bandgap semiconductors.
Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3

Xiangtai Liu,Kai Cheng,Ruiqi Li,Yifan Jia,Qin Lu,Shaoqing Wang,Haifeng Chen,Fei Ma

DOI: https://doi.org/10.1016/j.apsusc.2021.149458

IF: 6.7

2021-07-01

Applied Surface Science

Abstract:The doping effects on the electronic states of two-dimensional Ga2O3 are investigated by first-principle calculations. Substitutional Si, Ge or Sn atom at Ga sites results in donor doping behavior, while Mg, Ca or Sr dopant results in acceptor doping behavior. Particularly, the indirect bandgap of intrinsic monolayer Ga2O3 can be transformed into direct bandgap by doping these atoms. Charge density and PDOS results reveal that the interaction between the substitutional atom and neighboring O atoms affects the state distribution of the highest valence level and then the location of VBM is shifted. The indirect-to-direct bandgap transition also occurs for doped bilayer Ga2O3. However, doped bulk Ga2O3 always maintain indirect bandgap because of the lack of surface effects. The results are helpful to the development of two-dimensional Ga2O3 based photoemissive devices such as LED and lasers.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material

Fernando P. Sabino,Xuefen Cai,Su-Huai Wei,Anderson Janotti

DOI: https://doi.org/10.48550/arXiv.1906.00840

2019-06-03

Abstract:Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band structure through alloying will broaden its range of applications. Using hybrid density functional calculations we study the effects on adding Bi to Ga2O3. While in III-V semiconductors, such as GaAs and InAs, Bi tend to substitute on the pnictide site, we find that in Ga2O3, Bi prefers to substitute on the Ga site, resulting in dilute (Ga_{1-x}Bi_{x})2O3 alloys with unique electronic structure properties. Adding a few percent of Bi reduces the band gap of Ga2O3 by introducing an intermediate valence band that is significantly higher in energy than the valence band of the host material. This intermediate valence band is composed mainly of Bi 6s and O 2p orbitals, and it is sufficiently high in energy to provide opportunity for p-type doping.

Materials Science
First‐principles investigation of the influence of point defect on the electronic and optical properties of α‐Ga2O3

Yong Pan

DOI: https://doi.org/10.1002/er.8047

IF: 4.6

2022-05-03

International Journal of Energy Research

Abstract:Summary The Ga2O3 is a promising semiconductor, which is used in electric vehicles and 5G. However, the role of point defect of α‐Ga2O3 is unknown. To solve the problem, here, the influence of vacancy on the electronic and optical properties of α‐Ga2O3 is studied by the first‐principles calculations. Two typical vacancies, O vacancy and Ga vacancy, were designed. The calculated results show that the α‐Ga2O3 prefers to form O vacancy in comparison to the Ga vacancy. Furthermore, the calculated band gap of α‐Ga2O3 is 2.970 eV. However, the calculated band gap of O vacancy and Ga vacancy is 3.556 and 3.201 eV, which is bigger than the perfect α‐Ga2O3. Essentially, the wide band gap is that the removed atom results in a band shift from the Fermi level to the high‐energy regions. The change of band gap of these oxides is affirmed by the dielectric function. Finally, it is found that the α‐Ga2O3 oxide shows ultraviolet properties, which are in good agreement with the Ping and Berhanuddin's result. However, the calculated optical adsorption coefficient shows that the O vacancy induces the movement from the ultraviolet region to the visible light. The O vacancy and Ga vacancy weaken the storage optical properties of α‐Ga2O3 based on the analysis of loss function functional.
P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Ekaterine Chikoidze,Adel Fellous,Amador Perez-Tomas,Guillaume Sauthier,Tamar Tchelidze,Cuong Ton-That,Tung Thanh Huynh,Matthew Phillips,Stephen Russell,Mike Jennings,Bruno Berini,Francois Jomard,Yves Dumont

DOI: https://doi.org/10.1016/j.mtphys.2017.10.002

IF: 11.021

2017-12-01

Materials Today Physics

Abstract:Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) – O2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.

materials science, multidisciplinary,physics, applied
Novel p-type oxides with corundum structure for gallium oxide electronics

Kentaro Kaneko,Shizuo Fujita

DOI: https://doi.org/10.1557/s43578-021-00439-4

IF: 2.7

2022-01-19

Journal of Materials Research

Abstract:P-type ultra-wide bandgap materials have been desired for gallium oxide electronics. We show that the self-trapped exciton (STE) in α-Ga2O3 is a stable state relative to the free exciton from analysis of Urbach tails in absorption spectra. The stable STE formation indicates strong localization of holes, which suggests that α-Ga2O3 is disadvantageous as a p-type semiconductor. Instead of doping methods, using p-type material that have the same crystal structure as Ga2O3 is effective. An alloy thin film of α-(Rh,Ga)2O3 showed clear p-type conductivity with the large positive Hall coefficient. The α-Ir2O3 thin films also showed p-type conductivities. The origin of p-type conductivity is attributed to that 5d orbitals of Ir which consists the top of the valence band of α-Ir2O3, being located at the upper energy level compared to 2p orbitals of oxygen atoms.Graphical abstract

materials science, multidisciplinary
Thickness Dependent Optical Properties of Amorphous/polycrystalline Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Weiming Liu,Junbo He,Xudan Zhu,Tiantian Huang,Xin Chen,Yuxiang Zheng,Liangyao Chen,Rongjun Zhang

DOI: https://doi.org/10.1016/j.tsf.2022.139655

IF: 2.1

2023-01-01

Thin Solid Films

Abstract:Amorphous/polycrystalline Ga2O3 is attracting considerable attention because its low cost and convenience of use make it a promising material for applications of solar blind ultraviolet detectors and power electronics, except for the widely investigated alpha/beta phase Ga2O3. Spectroscopic ellipsometry (SE) is the preferred technique for determining optical constants that are vital for device design. The bandgap energy of Ga2O3 is close to the upper energy limit of commercial ellipsometers, making it challenging to determine the optical constants of Ga2O3 films. Considering the results obtained using the point-by-point method, we developed a strategy using 2 Tauc-Lorentz (2TL) oscillators that reasonably describes the optical behavior of the amorphous/polycrystalline Ga2O3 films deposited by plasma-enhanced atomic layer deposition on Si, sapphire, and Si/SiO2 substrates. The refractive index of the Ga2O3 films increases after annealing due to the reduced thickness and polycrystalline structure of the films. The polycrystalline samples have larger bandgaps than amorphous samples. The optical constants of Ga2O3 films with thicknesses ranging from -3 to -28 nm were extracted through SE fitting by the developed 2TL method. For both the as-deposited and annealed films, the bandgap increases as the film thickness decreases. The obtained results are useful for the design of photodetectors and power devices.
Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

Khushboo Dange,Rachana Yogi,Alok Shukla

DOI: https://doi.org/10.1088/1361-6463/acf3f8

2023-09-23

Abstract:In this paper we present a thorough first-principles based density functional theory study of the structural stability, electronic, magnetic, and optical properties of pristine and doped gallium phosphide (GaP) monolayers. The pristine GaP monolayer is found to have a periodically buckled structure, with an indirect band gap of 2.15 eV. The doping by X (B, Al, In, C, Si, Ge, Sn, Zn, Cd) at the Ga site, and Y (N, As, Sb, O, S, Se, Te, Zn, Cd) at the P site is considered, and an indirect to direct transition is observed after doping by In at the Ga site. For several cases, significant changes in the band gap are seen after doping, while system becomes metallic when O is substituted at the P site. The spin-polarized band structures are calculated for the monolayers with doping-induced magnetism, and we find that for some cases a direct band gap appears for one of the spin orientations. For such cases, we investigate the intriguing possibility of spin-dependent optical properties. Furthermore for several cases, the band gap is very small for one of the spin orientations, suggesting the possibility of engineering half metallicity by doping. For the layers with direct band gaps, the calculated optical absorption spectra are found to span a wide energy range in the visible and ultraviolet regions. The calculated formation energies of both the pristine and doped structures are quite small, indicating that the laboratory realization of such structures is quite feasible. On the whole, our results suggest that the doped GaP monolayer is a material with potentially a wide range of applications in nanoelectronics, spintronics, optoelectronics, solar cells, etc.

Materials Science
Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped -Ga2O3 with high hole mobility

Congcong Ma,Zhengyuan Wu,Zhuoxun Jiang,Ying Chen,Wei Ruan,Hao Zhang,Heyuan Zhu,Guoqi Zhang,Junyong Kang,Tong-Yi Zhang,Junhao Chu,Zhilai Fang

DOI: https://doi.org/10.1039/d1tc05324h

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:P-type doping of ultrawide-bandgap semiconductors, which are the key materials for fabrication of next-generation high-performance optoelectronic and electronic devices, is extremely difficult to achieve. The lack of p-type Ga2O3 has become a great obstacle to fabricate a full Ga2O3-based p-n homojunction for high-performance device applications. We demonstrate that N-doped beta-Ga2O3 achieved by a phase transition from GaN to beta-Ga2O3 possesses low formation energy and transition level epsilon(0/-), thereby with good N dopant solubility and low activation energy of N acceptors (0.355 eV). The delocalization effect, enhancement of valence band dispersion, and thus the decrease of the hole effective mass are predicted for N-doped beta-Ga2O3 due to the hybridization of O 2p with N 2p and Ga 4s orbitals. Activated hole concentrations of 6.1 x 10(15) and 2.1 x 10(16) cm(-3) at a valence band maximum are predicted for beta-Ga2O3:N-O(III) obtained by the nonspin and spin-polarized calculations, respectively. The hole mobility is 1.3 cm(2) V-1 s(-1) for undoped beta-Ga2O3 and remarkably increases to 8.8 and 5.5 cm(2) V-1 s(-1) for beta-Ga2O3:N-O(III) obtained by the non-spin and spin-polarized calculations, respectively. The origins for the unusual increase of hole mobility are attributed to the decrease of the hole effective mass, and reduction in acoustic deformation potential scattering and optical phonon scattering due to the weakening of electron-phonon coupling by N-induced phonon stiffening for beta-Ga2O3:N-O(III). The p-type conductivity of N-doped beta-Ga2O3 is demonstrated theoretically and also experimentally with a Hall hole concentration of 3.19 x 10(15) cm(-3) and a Hall hole mobility of 23.1 cm(2) V-1 s(-1) for N-doped beta-Ga2O3 films, and the p-type conductivity mechanisms are clarified. These studies will open a new horizon for other p-type wide bandgap oxide semiconductors.
Review of Ga2O3-based optoelectronic devices

D. Guo,Q. Guo,Z. Chen,Z. Wu,P. Li,W. Tang

DOI: https://doi.org/10.1016/j.mtphys.2019.100157

IF: 11.021

2019-12-01

Materials Today Physics

Abstract:Gallium oxide (Ga2O3), with an ultrawide-bandgap of ~4.9 eV, has attracted recently much scientific and technological attention due to its extensive future applications in power electronics (field effect transistors, Schottky barrier diodes), optoelectronics (phosphors and electroluminescent [EL] devices, solar-blind photodetectors), memory (spintronic devices, resistance random access memory devices), sensing systems (gas sensors, nuclear radiation detectors), and so on. Ga2O3 has six different polymorphs, known as α, β, γ, δ, ε, and κ. Each of these polymorphs has unique physical properties and can be widely used in various fields of devices. Among them, β-Ga2O3 has been the most widely studied and utilized due to its excellent chemical and thermal stability. Herein, we provide a review on Ga2O3-based optoelectronics, with a detailed introduction of the phosphors and EL devices and a concise of solar-blind photodetectors. We classify the currently reported phosphors and EL devices based on Ga2O3 undoped and doped with various elements (Eu, Er, Tm, Mn, Nd, Tb, Cr), and sort out the latest progresses of Ga2O3-based solar-blind photodetectors in various forms that include bulk single crystal, nanostructures, thin films with various device structure of metal-semiconductor-metal structure, Schottky junctions, heterojunctions, and pn junctions. Finally, conclusions and future perspectives for Ga2O3 based optoelectronic devices are presented.

materials science, multidisciplinary,physics, applied

Fate of the Remaining Rectal Segment After Subtotal Colectomy for Ulcerative Colitis

Electronic Structure and Optical Property of Metal-Doped Ga2o3: A First Principles Study

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

Effective P-type N-doped α-Ga2O3 from First-Principles Calculations

Electronic transport and optical properties of five different phases (α, β, ε , δ and γ) of Ga2O3: A first-principles study

Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

Investigation on the optical and electrical performance of aluminium doped gallium oxide thin films

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

First principles investigation of photoelectric properties of Ga 2 O 3 Doped with group IV elements (Si,Ge,Sn)

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Advancing Understanding of Structural, Electronic, and Magnetic Properties in 3D-Transition-metal TM-doped Α-Ga2o3 (TM = V, Cr, Mn, and Fe): A First-Principles and Monte Carlo Study

Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3

Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material

First‐principles investigation of the influence of point defect on the electronic and optical properties of α‐Ga2O3

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Novel p-type oxides with corundum structure for gallium oxide electronics

Thickness Dependent Optical Properties of Amorphous/polycrystalline Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Engineering the electronic, magnetic, and optical properties of GaP monolayer by substitutional doping: a first-principles study

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped -Ga<sub>2</sub>O<sub>3</sub> with high hole mobility

Review of Ga2O3-based optoelectronic devices