Abstract:Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si4C4O4, C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.

Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface

Hydrogen etching of 4H–SiC(0001) facet and step formation

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Planarization of SiC wafer using photo-catalyst incorporated pad

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching

Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

The Effects of Ultra-Smooth Surface Atomic Step Morphology on CMP Performances of Sapphire and SiC Wafers

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers