Abstract:Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we demonstrate quantum dot arrays in a silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe), and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make an Ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N + 1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. We put these results into perspective for quantum technology and identify industrial qubits, hybrid technology, automated tuning, and two-dimensional qubit arrays as four key trajectories that, when combined, enable fault-tolerant quantum computation.

A Light-Hole Quantum Well on Silicon

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Light-hole spin confined in germanium

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology

Strain engineering of the electronic states of silicon-based quantum emitters

Single artificial atoms in silicon emitting at telecom wavelengths

Low disorder and high valley splitting in silicon

Quantum dot arrays in silicon and germanium

Quantum-Ready Germanium and Silicon

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Semiconductor waveguide quantum well lasers

Nuclear Spin-Depleted, Isotopically Enriched 70 Ge/28 Si70 Ge Quantum Wells

A backgate for enhanced tunability of holes in planar germanium

Germanium wafers for strained quantum wells with low disorder