Higher-Order Topology in Bismuth
Frank Schindler,Zhijun Wang,Maia G. Vergniory,Ashley M. Cook,Anil Murani,Shamashis Sengupta,Alik Yu. Kasumov,Richard Deblock,Sangjun Jeon,Ilya Drozdov,Hélène Bouchiat,Sophie Guéron,Ali Yazdani,B. Andrei Bernevig,Titus Neupert
DOI: https://doi.org/10.1038/s41567-018-0224-7
2019-12-18
Abstract:The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.
Materials Science,Mesoscale and Nanoscale Physics