Abstract:Abstract With its monoelemental composition, various crystalline forms and an inherently strong spin–orbit coupling, bismuth has been regarded as an ideal prototype material to expand our understanding of topological electronic structures. In particular, two-dimensional bismuth thin films have attracted a growing interest due to potential applications in topological transistors and spintronics. This calls for an effective physical model to give an accurate interpretation of the novel topological phenomena shown by two-dimensional bismuth. However, the conventional semi-empirical approach of adapting bulk bismuth hoppings fails to capture the topological features of two-dimensional bismuth allotropes because the electronic band topology is heavily influenced by crystalline symmetries. Here we provide a new parameterization using localized Wannier functions derived from the Bloch states in first-principles calculations. We construct new tight-binding models for three types of two-dimensional bismuth allotropes: a Bi (111) bilayer, bismuthene and a Bi (110) bilayer. We demonstrate that our tight-binding models can successfully reproduce the electronic and topological features of these two-dimensional allotropes. Moreover, these tight-binding models can be used to explain the physical origin of the occurrence of novel band topology and the perturbation effects in these bismuth allotropes. In addition, these models can serve as a starting point for investigating the electron/spin transport and electromagnetic response in low-dimensional topological devices.

Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth

Higher-Order Topology in Bismuth

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Spin-Orbit-Coupling-Induced Topological Transition and Anomalously Strong Intervalley Scattering in Two-Dimensional Bismuth Allotropes with Enhanced Thermoelectric Performances

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topological Edge States and Electronic Structures of A 2d Topological Insulator: Single-Bilayer Bi (111)

Realizing a Superconducting Square-Lattice Bismuth Monolayer

Stability of topological properties of bismuth (111) bilayer

Effects of Low Dimensionality on Electronic Structure and Thermoelectric Properties of Bismuth

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Amorphization-induced topological and insulator-metal transitions in bidimensional Bi$_x$Sb$_{1-x}$ alloys

Quasi-one-dimensional Topological Material Bi4X4(X=Br,I)

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Resolving the Topological Classification of Bismuth with Topological Defects.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Quasi-one-dimensional topological material Bi<sub>4</sub>X<sub>4</sub>(X=Br,l)

Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys

Observation of open Fermi surface in bismuth

First-principles Prediction on Bismuthylene Monolayer As a Promising Quantum Spin Hall Insulator