Abstract:Bismuth is a candidate material for three dimensional higher dimensional topological insulators. We performed electronic transport experiments on small diameter crystalline bismuth nanowires to clarify the role of the proposed hinge channels in the interlayer coupling. The magnetoresistance presents a sequence of peaks at Yamaji magic angles for which the interlayer group velocity is zero pointing to flat bands due to the layered structure. Furthermore, we observe a peak for high magnetic fields applied parallel to the layers, a definitive signature of interlayer coherence that enables deduction of the interlayer transfer integral of 8 meV. We demonstrate transport by a corrugated open Fermi surface of holes that is extended, with the high angular precision of around 0.016 rad in the interlayer direction. The observations indicate that coherence and the crystallographic direction set by hinges play a key role in the interlayer coupling of bismuth.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to clarify the role of hinge channels in inter - layer coupling and verify whether bismuth is a three - dimensional high - order topological insulator (HOTI) by experimentally studying the electron transport properties in bismuth (Bi) nanowires. Specifically, the author hopes to reveal the existence of inter - layer coherent coupling and its influence on the electronic structure by studying the angle - dependent magnetoresistance (AMR) of single - crystal bismuth nanowires with a small diameter (about 50 nm). The following are the main problems and objectives of the paper: 1. **Confirm whether there is an open Fermi surface in bismuth**: Different from the closed Fermi surface in bulk bismuth, the author hopes to verify whether there is an open Fermi surface in bismuth nanowires, which will help to understand the nature of its surface states. 2. **Study the role of hinge channels**: The author hopes to experimentally verify the role of hinge channels in inter - layer coupling. These channels are considered to be able to support topologically protected boundary states. 3. **Observe the Yamaji magic - angle phenomenon**: Through AMR experiments, the author hopes to observe the magnetoresistance peak at a specific angle (Yamaji magic angle), which will indicate the existence of flat bands caused by the layered structure. 4. **Determine the inter - layer transfer integral**: Through magnetoresistance experiments under a high magnetic field, the author hopes to be able to measure and determine the inter - layer transfer integral ($t\approx8\, \text{meV}$), thereby further understanding the strength of inter - layer coupling. 5. **Explore the unique electronic properties of bismuth nanowires**: The author also hopes to explore other possible unique electronic properties in bismuth nanowires, such as coherent peaks, side peaks, and non - saturated magnetoresistance phenomena. These properties may be related to topologically protected surface states. ### Specific experimental methods - **Sample preparation**: Single - crystal bismuth nanowires with a diameter of about 50 nm were prepared by the fiber - drawing method. - **Experimental measurement**: The changes in magnetoresistance at different angles were studied through angle - dependent magnetoresistance (AMR) experiments, and measurements were carried out in combination with high - magnetic - field conditions. - **Data analysis**: By analyzing the changes in magnetoresistance with angle and magnetic field, features such as the Yamaji magic angle, coherent peaks, and side peaks were identified, and the physical mechanisms behind these phenomena were explained. ### Main findings - The magnetoresistance peak at the Yamaji magic angle was observed, confirming the existence of flat bands caused by the layered structure. - An open Fermi surface was found, in sharp contrast to the closed Fermi surface in bulk bismuth. - The inter - layer transfer integral $t\approx8\, \text{meV}$ was determined, indicating weak inter - layer coupling. - Coherent peaks and side peaks were observed, further supporting the existence of inter - layer coherent coupling. Through these studies, the author not only verified the potential of bismuth as a high - order topological insulator but also revealed its unique electron transport properties, providing an important basis for further research on topological effects in low - dimensional materials.

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