Abstract:Electronic topological phases are renowned for their unique properties, where conducting surface states exist on the boundary of an insulating three-dimensional bulk. While the transport response of the surface states has been extensively studied, the response of the topological hinge modes remains elusive. Here, we investigate a layered topological insulator $\alpha$-Bi$_4$Br$_4$, and provide the first evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps. Our magnetoresistance measurements reveal pronounced h/e periodic (where h denotes Planck's constant and e represents the electron charge) Aharonov-Bohm oscillation. The observed periodicity, which directly reflects the enclosed area of phase-coherent electron propagation, matches the area enclosed by the sample hinges, providing compelling evidence for the quantum interference of electrons circumnavigating around the hinges. Notably, the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry, and in agreement with the locations of the hinge modes according to our scanning tunneling microscopy images. Remarkably, this demonstration of quantum transport in a topological insulator can be achieved using a flake geometry and we show that it remains robust even at elevated temperatures. Our findings collectively reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can be directly applied to the development of efficient quantum electronic devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **In higher - order topological insulators, how to verify and understand the quantum coherent transport properties of one - dimensional hinge modes**. Specifically, the authors focus on whether there exists and can be observed the quantum coherent transport phenomenon dominated by topologically protected hinge states in the layered topological insulator $ \alpha\text{-Bi}_4\text{Br}_4 $. ### Main Problem Analysis 1. **Verification of Quantum Coherent Transport**: - Previous studies have mainly focused on the transport properties of two - dimensional surface states, while the response of one - dimensional hinge modes has not been fully studied. - In this paper, the existence of quantum coherent transport is verified by experimentally measuring magnetoresistance, especially by observing obvious Aharonov - Bohm (AB) oscillations. These oscillations indicate that quantum interference occurs when electrons travel around the hinge path. 2. **Topologically Protected Hinge States**: - In $ \alpha\text{-Bi}_4\text{Br}_4 $, the hinge states exist within the bulk energy gap and the surface energy gap of the insulator, providing a strongly confined quantum channel. - The authors show the quantum coherence of these hinge states, and this coherence is determined by the topological properties and symmetry of the material. 3. **Potential for Practical Applications**: - This quantum coherent transport property has potential application value, such as developing low - dissipation quantum electronic devices. - Compared with traditional electronic devices, devices based on topological circuits are more robust to defects and impurities and have less energy loss, so they have significant advantages in practical applications. ### Formula Explanation The key formula involved in the paper is the periodicity of the Aharonov - Bohm effect: \[ \Delta B=\frac{\Phi_0}{S}=\frac{h}{eS} \] where: - $ h $ is Planck's constant, - $ e $ is the electron charge, - $ S $ is the area where the electron trajectory maintains phase coherence, - $ \Phi_0 = \frac{h}{e} $ is the magnetic flux quantum. In addition, for magnetic fields in different directions, the paper also discusses the change in periodicity, for example: \[ \Delta B_{\parallel a}\approx0.52 \, \text{T} \] \[ \Delta B_{\perp ab}\approx1.92 \, \text{T} \] These periodicities are closely related to the geometric dimensions of the sample, further confirming the quantum coherent transport properties of the hinge states. ### Conclusion Through detailed experimental and theoretical analysis, this paper provides conclusive evidence for the first time that there exists a quantum coherent transport phenomenon dominated by topologically protected hinge states in $ \alpha\text{-Bi}_4\text{Br}_4 $. This finding not only reveals a new physical mechanism but also paves the way for the future development of efficient quantum electronic devices based on topological insulators.

Transport response of topological hinge modes in $α$-Bi$_4$Br$_4$

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