Abstract:Helical Dirac fermions-charge carriers that behave as massless relativistic particles with an intrinsic angular momentum (spin) locked to its translational momentum-are proposed to be the key to realizing fundamentally new phenomena in condensed matter physics. Prominent examples include the anomalous quantization of magneto-electric coupling, half-fermion states that are their own antiparticle, and charge fractionalization in a Bose-Einstein condensate, all of which are not possible with conventional Dirac fermions of the graphene variety. Helical Dirac fermions have so far remained elusive owing to the lack of necessary spin-sensitive measurements and because such fermions are forbidden to exist in conventional materials harbouring relativistic electrons, such as graphene or bismuth. It has recently been proposed that helical Dirac fermions may exist at the edges of certain types of topologically ordered insulators-materials with a bulk insulating gap of spin-orbit origin and surface states protected against scattering by time-reversal symmetry-and that their peculiar properties may be accessed provided the insulator is tuned into the so-called topological transport regime. However, helical Dirac fermions have not been observed in existing topological insulators. Here we report the realization and characterization of a tunable topological insulator in a bismuth-based class of material by combining spin-imaging and momentum-resolved spectroscopies, bulk charge compensation, Hall transport measurements and surface quantum control. Our results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry's phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime. The observed topological nodal state is shown to be protected even up to 300 K. Our demonstration of room-temperature topological order and non-trivial spin-texture in stoichiometric Bi(2)Se(3).M(x) (M(x) indicates surface doping or gating control) paves the way for future graphene-like studies of topological insulators, and applications of the observed spin-polarized edge channels in spintronic and computing technologies possibly at room temperature.

Topological nature of higher-order hinge states revealed by spin transport

Field-Tunable One-Sided Higher-Order Topological Hinge States in Dirac Semimetals

3D Hinge Transport in Acoustic Higher-Order Topological Insulators

Reducing Electronic Transport Dimension to Topological Hinge States by Increasing Geometry Size of Dirac Semimetal Josephson Junctions.

Transport response of topological hinge modes in $α$-Bi$_4$Br$_4$

Discovery of higher-order topological insulators using the spin Hall conductivity as a topology signature

Acoustic Higher-Order Weyl Semimetal with Bound Hinge States in the Continuum

Higher-order topological phase with subsystem symmetries

Hinge Spin Polarization in Magnetic Topological Insulators Revealed by Resistance Switch

Aharonov-Bohm effect in three-dimensional higher-order topological insulators

Hinged Quantum Spin Hall Effect in Antiferromagnetic Topological Insulators

Higher-order topological phase without crystalline symmetry

Hinge Majorana flat band in type-II Dirac semimetals

Topological Transition of Superconductivity in Dirac Semimetal Nanowire Josephson Junctions

The Bulk-Hinge Correspondence and Three-Dimensional Quantum Anomalous Hall Effect in Second Order Topological Insulators

Scanning Tunneling Microscopy Observation of the Hinge States of Bismuth Nanocrystals

Higher-Order Fabry-Pérot Interferometer from Topological Hinge States

STM observation of the hinge-states of bismuth nanocrystals

A Tunable Topological Insulator in the Spin Helical Dirac Transport Regime.

One-dimensional helical transport in topological insulator nanowire interferometers