Electronic properties of nano-structured bismuth-antimony materials

Shuang Tang,Mildred S. Dresselhaus

DOI: https://doi.org/10.1039/c4tc00146j

2014-01-01

J. Mater. Chem. C

Abstract:Bismuth antimony (Bi 1−x Sb x ) is one of the most important materials systems for fundamental materials science, condensed matter physics, low temperature thermoelectrics, infrared applications, and beyond.

What problem does this paper attempt to address?

Systematic Study of Electronic Phases, Band Gaps and Band Overlaps of Bismuth Antimony Nanowires

Shuang Tang,Mildred Dresselhaus

DOI: https://doi.org/10.48550/arXiv.1312.0900

2013-12-03

Materials Science

Abstract:We have developed an iterative one dimensional model to study the narrow band-gap and the associated non-parabolic dispersion relations for bismuth antimony nanowires. An analytical approximation has also been developed. Based on the general model, we have developed, we have calculated and analyzed the electronic phase diagrams and the band-gap/band-overlap map for bismuth antimony nanowires, as a function of stoichiometry, growth orientation, and wire width.
Effects of scattering mechanisms on thermoelectric properties of bismuth

Kezhu Wu,Liangyong Huang,Chang Yi Wu,gengsheng Yu

DOI: https://doi.org/10.1016/j.ssc.2024.115471

IF: 1.934

2024-02-24

Solid State Communications

Abstract:This discussion explores various facets of thermoelectric materials research, focusing on bismuth (Bi) and its semiconductor form (Bi'). It highlights Bi's semiconductor nature and the importance of Bi' in thermoelectric materials. The thermoelectric properties of Bi' are examined, emphasizing temperature-dependent superiority. Electronic lifetimes and thermoelectric properties, considering scattering mechanisms like acoustic and ionized impurity scattering, is discussed. Bi's thermoelectric properties are influenced by temperature and carrier concentration, showing potential superiority over traditional Bi, especially at room temperature. The results show that ZT reaches a maximum value of 0.59 at 300K. The intricate relationship between Bi' thermoelectric performance, temperature, and scattering mechanisms, particularly ionized impurity scattering, is elucidated. In addition, Bi' holds promise for superior thermoelectric performance, offering valuable insights for future material development.

physics, condensed matter
Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

He Bingchen,Tian Guo,Gou Jian,Liu Baoxing,Shen Kongchao,Tian Qiwei,Yu Zhengqing,Song Fei,Xie Haipeng,Gao Yongli,Lu Yunhao,Wu Kehui,Chen Lan,Huang Han

DOI: https://doi.org/10.1016/j.susc.2018.09.005

IF: 1.9

2018-01-01

Surface Science

Abstract:Atomically thin Bismuth (Bi) films are predicated to be candidates for high temperature quantum spin hall materials. Here, we reported the structural evolutions and the corresponding electronic properties of Bi ultrathin films on Au(111) at initial stage as a function of coverage using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and photoemission spectroscopy (PES). The small window for a stable two dimensional (2D) Bi in Kagome and honeycomb lattice on Au(111) has been optimized. LEED and STM results show that Bi atoms self-assemble into dimered (5 x 5) superdots, (root 37 x root 37)R25. 3 degrees in a Kagome lattice and (p x root 3) stripes sequentially in the first monolayer regime and into bi-layered Bi (110) islands afterwards. UPS results show the disappearance of Au(111) surface states at coverage of 0.18 ML, revealing the Van der Waals interactions between Au(111) and Bi adatoms. The repulsive interactions between Bi atoms prevent the 2D Bi structure from islands forming at initial stage and benefit large domains in (root 37 x root 37)R25. 3 degrees Kagome lattice. Such 2D Bi may be interesting because of its relevance in terms of novel physical properties.
Bismuth Nanotubes: Potential Semiconducting Nanomaterials

CR Su,HT Liu,JM Li

DOI: https://doi.org/10.1088/0957-4484/13/6/310

IF: 3.5

2002-01-01

Nanotechnology

Abstract:We have employed the first-principles molecular dynamics method to study the stabilities and electronic properties of bismuth nanotubes. There are some stable bismuth nanotubes. The strain energies of Bi(n, n) nanotubes follow the classical 1/D-2 strain law. For small Bi(n, 0) nanotubes, the strain energies show a non-linear dependence on 1/D-2. Bismuth nanotubes are predicted to be semiconducting in both (n, n) and (n, 0) forms. For small-diameter bismuth nanotubes, the band structure varies strongly because of hybridizations. As the diameters are larger than 18 A, the band C gaps of both Bi(n, n) and Bi(n 0) nanotubes approach 0.63 eV, corresponding to the band gap of a bismuth sheet at the F point. Thus 7 bismuth nanotubes are seen as potential semiconductor nanomaterials for future nano-electronics applications.
Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Eric Ashalley,Haiyuan Chen,Xin Tong,Handong Li,Zhiming M. Wang

DOI: https://doi.org/10.1007/s11706-015-0285-9

2015-05-04

Frontiers of Materials Science

Abstract:Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi2Te3 possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi2Te3 nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi2Te3 nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi2Te3 and Bi2Te3-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi2Te3 nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi2Te3 is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.

materials science, multidisciplinary
Nano-Bismuth-Sulfide for Advanced Optoelectronics

Zimin Li,Ye Tian

DOI: https://doi.org/10.3390/photonics9110790

IF: 2.536

2022-10-25

Photonics

Abstract:Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the trends reported (from theoretical calculations and experimental observations) in their electrical properties and optical response, and their emerging applications.

optics
Emerging members of two-dimensional materials: bismuth-based ternary compounds

Ailun Zhao,Luhong Zhang,Yujie Guo,Hui Li,Shuangchen Ruan,Yu-Jia Zeng

DOI: https://doi.org/10.1088/2053-1583/abc73a

IF: 6.861

2020-12-01

2D Materials

Abstract:Abstract Bismuth-based binary compounds, including Bi 2 Se 3 and Bi 2 Te 3 , have attracted increasing attention as well-known topological insulators. On the other hand, bismuth-based ternary compounds exhibit diverse properties, such as, ultrahigh carrier mobility, and strong Rashba spin splitting. Moreover, they boast of superior photocatalytic properties, implying great potential to be used in a wide range of applications. The unique structure and properties of two-dimensional (2D) materials, especially the extraordinary electronic and optical properties of 2D Bi 2 O 2 Se, have given rise to significant research interests for the exploration of 2D bismuth-based ternary compounds. In this review, we will comprehensively discuss the properties of three important families of bismuth-based ternary compounds, including Bi 2 O 2 X (X = S, Se, Te), BiTeX (X = Cl, Br, I), and BiOX (X = Cl, Br, I). In particular, we have placed emphasis on the latest progress in their 2D forms, including their novel properties and applications. This review would aid in understanding the superior performance of bismuth-based ternary compounds and offer a perspective for future research on these emerging 2D materials.

materials science, multidisciplinary
Bi(1)-(x)Sb(x) alloy nanocrystals: colloidal synthesis, charge transport, and thermoelectric properties.

Hao Zhang,Jae Sung Son,Jaeyoung Jang,Jong-Soo Lee,Wee-Liat Ong,Jonathan A Malen,Dmitri V Talapin

DOI: https://doi.org/10.1021/nn404692s

IF: 17.1

2013-01-01

ACS Nano

Abstract:Nanostructured Bi1-xSbx alloys constitute a convenient system to study charge transport in a nanostructured narrow-gap semiconductor with promising thermoelectric properties. In this work, we developed the colloidal synthesis of monodisperse sub-10 nm Bi1-xSbx alloy nanocrystals (NCs) with controllable size and compositions. The surface chemistry of Bi1-xSbx NCs was tailored with inorganic ligands to improve the interparticle charge transport as well as to control the carrier concentration. Temperature-dependent (10-300 K) electrical measurements were performed on the Bi1-xSbx NC based pellets to investigate the effect of surface chemistry and grain size (∼10-40 nm) on their charge transport properties. The Hall effect measurements revealed that the temperature dependence of carrier mobility and concentration strongly depended on the grain size and the surface chemistry, which was different from the reported bulk behavior. At low temperatures, electron mobility in nanostructured Bi1-xSbx was directly proportional to the average grain size, while the concentration of free carriers was inversely proportional to the grain size. We propose a model explaining such behavior. Preliminary measurements of thermoelectric properties showed a ZT value comparable to those of bulk Bi1-xSbx alloys at 300 K, suggesting a potential of Bi1-xSbx NCs for low-temperature thermoelectric applications.
Bismuth as a Reactive Solvent in the Synthesis of Multicomponent Transition-Metal-Bearing Bismuthides

Alexander Ovchinnikov,Svilen Bobev

DOI: https://doi.org/10.1021/acs.inorgchem.9b02881

2020-03-16

Abstract:Employment of liquid bismuth (Bi) allows the facile single-crystal growth of compounds containing elements with high melting points, provided that these elements have reasonably high solubility in Bi. Utilization of the Bi flux approach yielded two new ternary bismuthides, SrNi0.17(1)Bi2 [a defect variant of the BaCuSn2 type, space group Cmcm, a = 4.879(2) Å, b = 17.580(6) Å, and c = 4.696(2) Å] and CaTi3Bi4 [NdTi3(Sn0.1Sb0.9)4 structure type, space group Fmmm, a = 5.6295(7) Å, b = 9.8389(1) Å, and c = 23.905(3) Å]. In addition, the ternary antimonide CaV3Sb4, isostructural with CaTi3Bi4, was synthesized from antimony (Sb) flux, and analyzed with the goal of validating structural assessment of the bismuthide analogue, where the X-ray crystallographic work proved to be very challenging. All synthesized compounds exhibit complex crystal structures featuring quasi-two-dimensional building blocks of different topologies. First-principle calculations reveal hypervalent bonding in the homoatomic Bi subunits. Physical property measurements indicate metallic conductivity and the absence of localized magnetism in the studied compounds.
Emerging Mono‐Elemental Bismuth Nanostructures: Controlled Synthesis and Their Versatile Applications

Weichun Huang,Jun Zhu,Mengke Wang,Lanping Hu,Yanfeng Tang,Yiqing Shu,Zhongjian Xie,Han Zhang

DOI: https://doi.org/10.1002/adfm.202007584

IF: 19

2020-12-08

Advanced Functional Materials

Abstract:<p>Bismuth (Bi), as a nontoxic and inexpensive diamagnetic heavy metal, has recently been utilized for the preparation of a variety of nanomaterials, such as nanoparticles, nanowires, nanotubes, nanosheets, etc., with a tunable bandgap, unique structure, excellent physicochemical properties, and compositional features for versatile properties, such as near‐infrared absorbance, high X‐ray attenuation coefficient, excellent photothermal conversion efficiency, and a long circulation half‐life. These features have endowed mono‐elemental Bi nanomaterials with desirable performances for electronics/optoelectronics, energy storage and conversion, catalysis, nonlinear photonics, sensors, biomedical applications, etc. This review summarizes the controlled synthesis of mono‐elemental Bi nanomaterials with different shapes and sizes, highlights the state‐of‐the‐art progress of the desired applications of mono‐elemental Bi nanomaterials, and presents some personal insights on the challenges and future opportunities in this research area. It is hoped that the controllable manipulation techniques of Bi nanomaterials, along with their unique properties, can shed light on the next‐generation devices based on Bi nanostructures and Bi‐related nanomaterials.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Novel Bismuth Nanotubes

CR Su,JM Li

DOI: https://doi.org/10.1088/0256-307x/19/12/313

2002-01-01

Chinese Physics Letters

Abstract:Theoretical investigations show that bismuth nanotubes are semiconductors for all diameters. For small diameter bismuth nanotubes, the band structures and bandgaps vary strongly with the strong hybridization effect. When the diameters are larger than 18 Å, the bandgaps of Bi (n,n) and (n,0) nanotubes approach 0.63 eV, corresponding to the bandgap of bismuth sheet at the Γ point. Thus, bismuth nanotubes are expected to be a potential semiconductor nanomaterial in future nanoelectronics.
Influence of antimony dopant in some physical properties of MnBi1-xSbx thin films

A.M. Ahmed,A.K. Diab,Esraa Y. Omar,H.F. Mohamed

DOI: https://doi.org/10.1016/j.optmat.2024.114883

IF: 3.754

2024-02-01

Optical Materials

Abstract:Compositional dependencies of the optical and electrical properties of as-deposited MnBi1-xSbx films, prepared by thermal evaporation, have been studied. Few measurements of the thermoelectric power and electrical resistivity of MnBiSb thin films have been performed previously. The thermoelectric power showed a negative sign for all thin films. ρ(T) decreases monotonically with the temperature for all samples, indicating semiconductor behavior. The absorbance A (λ) and reflectance R (λ) of different doping (MnBi1-xSbx) thin films have been studied in the wavelength range 400–1500 nm. MnBi1-xSbx films with a high proportion of Sb can be used as adsorbents. The absorption value increases with increasing wavelength and then decreases again. Blue shift is observed in the peak of the absorption spectra with doping. The absorption coefficient α and extinction coefficient k were determined from the reflectance spectra in the strong absorption region. Moreover, the optical energy gap Eopt, increases with increasing Sb content.

materials science, multidisciplinary,optics
Ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride

Xianzhong Yang,Shengnan Lu,Jun Peng,Xiangchen Hu,Nan Wu,Congcong Wu,Chao Zhang,Yifan Huang,Yi Yu,Hung-Ta Wang

DOI: https://doi.org/10.1007/s12274-020-3157-2

IF: 9.9

2020-11-13

Nano Research

Abstract:Despite the unique properties of bismuth (Bi), there is a lack of two-dimensional (2D) heterostructures between Bi and other functional 2D materials. Here, a coherent strategy is reported to simultaneously synthesize rhombohedral phase Bi nanoflakes and bismuth oxychloride (BiOCl) nanosheets. The delicate balance between several reactions is mediated mainly for the reduction and chlorination in the chemical vapor transport (CVT) process. The Bi-BiOCl lateral heterostructures have been constructed via the coalescence of the two different 2D nanostructures. The characteristics of ambipolar conducting Bi and insulator-like BiOCl are elaborated by scanning microwave impedance microscopy (sMIM). This work demonstrates a way to construct a 2D Bi nanostructure in junction with its oxyhalide.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Optical properties of bismuth nanostructures towards the ultrathin film regime

Johann Toudert,Rosalia Serna,Claire Deeb,Esther Rebollar

DOI: https://doi.org/10.1364/OME.9.002924

2019-10-07

Optical Materials Express

Abstract:Johann Toudert, Rosalia Serna, Claire Deeb, Esther Rebollar Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n∼10) and a negative ultraviolet-visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing for applications in nanophotonics, the ... [Opt. Mater. Express 9, 2924-2936 (2019)]

materials science, multidisciplinary,optics
Topological Weyl semimetals in $\rm Bi$$_{1-x}$$\rm Sb$$_{x}$ alloys

Yu-Hsin Su,Wujun Shi,Claudia Felser,Yan Sun

2018-01-01

Abstract:We have investigated the Weyl semimetal (WSM) phases in bismuth antimony ($rm Bi$$_{1-x}$$rm Sb$$_{x}$) alloys by the combination of atomic composition and arrangement. Via first principles calculations, we have found two WSM states with the Sb concentration of $x=0.5$ and $x=0.83$ with specific inversion symmetry broken elemental arrangement. The Weyl points are close to the Fermi level in both of these two WSM states. Therefore, it has a good opportunity to obtain Weyl points in Bi-Sb alloy. The WSM phase provides a reasonable explanation for the current transport study of BiSb alloy with the violation of Ohmu0027s law [Dongwoo Shin, et al., Nature Materials 16, 1096 (2017)]. This work shows that the topological phases in Bi-Sb alloys depend on both elemental composition and their specific arrangement.
Flux Free Single Crystal Growth and Detailed Physical Property Characterization of Bi1-xSbx (x = 0.05, 0.1 and 0.15) Topological Insulator

Rabia Sultana,Ganesh Gurjar,Bhasker Gahtori,Satyabrata Patnaik,V.P.S. Awana

DOI: https://doi.org/10.1088/2053-1591/ab35b9

2019-09-06

Abstract:Here, we report the crystal growth, physical and transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15) topological insulator. Single crystals of Bi1-xSbx (x = 0.05, 0.1 and 0.15) were grown by melting bismuth and antimony together using the facile self flux method. The XRD measurements displayed highly indexed 00l lines and confirmed the crystalline nature as well as the rhombohedral structure of the Bi1-xSbx (x = 0.05, 0.1 and 0.15) crystals. Raman spectroscopy measurements for Bi1-xSbx system revealed four peaks within the spectral range of 10 to 250 cm-1 namely A1g and Eg modes corresponding to Bi-Bi and Sb-Sb vibrations. Scanning electron microscopy (SEM) and energy dispersive Temperature dependent electrical resistivity curves with and without applied magnetic field exhibited a metallic behaviour and linear non-saturating magneto-resistance (MR) respectively for all the antimony (Sb) concentrations of x = 0.05, 0.1 and 0.15. The lowest Sb concentration sample with x = 0.05 (Bi0.95Sb0.05) exhibited the highest MR value of about 1400%, followed by x = 0.1 and 0.15 samples (Bi0.9Sb0.1 and Bi0.85Sb0.05) with MR values reaching up to 500% and 110% respectively at 2K and 6Tesla applied field. The magneto-conductivity (MC) is fitted to the HLN (Hikami Larkin Nagaoka) equation and it is found that the charge conduction mechanism is mainly dominated by WAL (weak anti-localization) along with a small contribution from WL (weak localization) effect. Summarily, the short letter discusses the synthesis, interesting transport and magneto-transport properties of Bi1-xSbx (x = 0.05, 0.1 and 0.15), which could be useful in understanding the fascinating properties of topological insulators and their technological applications.

Materials Science,Strongly Correlated Electrons,Superconductivity
Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn0.6Bi2 and (La0.5RE0.5)Zn0.6Bi2 (RE = Pr or Nd)

Karishma Prasad,Dinesh Upreti,Md Rafique Un Nabi,Richeal A Oppong,Fei Wang,Manish Shinde,Jin Hu,Jian Wang

DOI: https://doi.org/10.1021/acs.inorgchem.4c02713

2024-10-28

Abstract:Bismuth is a good constituent element for many quantum materials due to its large atomic number, 6s26p3 orbitals, and strong spin-orbital coupling. In this work, three new bismuthides, NdZn0.6Bi2, (La0.5Pr0.5)Zn0.6Bi2, and (La0.5Nd0.5)Zn0.6Bi2, were grown by a metal flux method, and their crystal structures were accurately determined by single-crystal X-ray diffraction. These new bismuthides belong to the RE-T-Pn2 (RE = La-Lu, T = Mn, Fe, Co, Ni, or Zn, and Pn = P, As, Sb, or Bi) family, are isostructural, and crystallize in the HfCuSi2 structure type. The bismuth elements have two possible oxidation states, Bi3- and Bi-, which were studied by X-ray photoelectron spectroscopy (XPS). Two binding energy peaks of 155.91 and 161.23 eV were observed for Bi atoms within NdZn0.6Bi2, and similar binding energy peaks were detected in NdBi and LiBi. XPS also confirmed the trivalent nature of Nd, which was further verified by magnetic measurements. Additionally, magnetic measurements revealed that NdZn0.6Bi2 exhibits an antiferromagnetic transition around 3 K, while the mixed-cation compounds do not show any magnetic transition down to 2 K. Electronic transport measurements reveal weak magnetoresistance in all three compounds, with a maximum value of ∼25% at 2 K and 9 T for (La0.5Nd0.5)Zn0.6Bi2.
Sb concentration dependent structural and resistive properties of polycrystalline Bi-Sb alloys

K. Malik,Diptasikha Das,D. Mondal,D. Chattopadhyay,A. K. Deb,S. Bandyopadhyay,Aritra Banerjee

DOI: https://doi.org/10.1063/1.4759137

IF: 2.877

2012-10-15

Journal of Applied Physics

Abstract:Polycrystalline Bi1−xSbx alloys have been synthesized over a wide range of antimony concentration (0.08 ≤ x ≤ 0.20) by solid state reaction method. In depth structural analysis using x-ray diffraction (XRD) and temperature dependent resistivity (ρ) measurement of synthesized samples have been performed. XRD data confirmed single phase nature of polycrystalline samples and revealed that complete solid solution is formed between bismuth and antimony. Rietveld refinement technique, utilizing maud software, has been used to perform detailed structural analysis of the samples and lattice parameters of polycrystalline Bi1−xSbx alloys have been estimated. Lattice parameter and unit cell volume decreases monotonically with increasing antimony content. The variation of lattice parameters with antimony concentration depicts a distinct slope change at x = 0.12. Band gap (Eg) has been estimated from the thermal variation of resistivity data, with the 12% Sb content sample showing maximum Eg. It has been observed that with increasing antimony concentration the transition from direct to indirect gap semiconductor is intimately related to the variation of the estimated lattice parameters. Band diagram for the polycrystalline Bi1−xSbx alloy system has also been proposed.

physics, applied
Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals

Yujie Yang,Bohua He,Zhenglin Jia,Ruiming Li,Xuan Yu,Du Wang,Cheng Lei,Yong Liu,Guang-Xing Liang,Jianbo Wang,He Zheng,Qianqian Lin

DOI: https://doi.org/10.1021/acs.nanolett.4c01959

IF: 10.8

2024-06-05

Nano Letters

Abstract:Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS(2) solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn 0.6 Bi 2 and (La 0.5 RE 0.5 )Zn 0.6 Bi 2 (RE = Pr or Nd)

Karishma Prasad,Dinesh Upreti,Md. Rafique Un Nabi,Richeal A. Oppong,Fei Wang,Manish Shinde,Jin Hu,Jian Wang

DOI: https://doi.org/10.1021/acs.inorgchem.4c02713

IF: 4.6

2024-09-21

Inorganic Chemistry

Abstract:Bismuth is a good constituent element for many quantum materials due to its large atomic number, 6s26p3 orbitals, and strong spin-orbital coupling. In this work, three new bismuthides, NdZn(0.6)Bi(2), (La(0.5)Pr(0.5))Zn(0.6)Bi(2), and (La(0.5)Nd(0.5))Zn(0.6)Bi(2), were grown by a metal flux method, and their crystal structures were accurately determined by single-crystal X-ray diffraction. These new bismuthides belong to the RE-T-Pn(2) (RE = La-Lu, T = Mn, Fe, Co, Ni, or Zn, and Pn = P, As, Sb,...

chemistry, inorganic & nuclear

Electronic properties of nano-structured bismuth-antimony materials

Systematic Study of Electronic Phases, Band Gaps and Band Overlaps of Bismuth Antimony Nanowires

Effects of scattering mechanisms on thermoelectric properties of bismuth

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Bismuth Nanotubes: Potential Semiconducting Nanomaterials

Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Nano-Bismuth-Sulfide for Advanced Optoelectronics

Emerging members of two-dimensional materials: bismuth-based ternary compounds

Bi(1)-(x)Sb(x) alloy nanocrystals: colloidal synthesis, charge transport, and thermoelectric properties.

Bismuth as a Reactive Solvent in the Synthesis of Multicomponent Transition-Metal-Bearing Bismuthides

Emerging Mono‐Elemental Bismuth Nanostructures: Controlled Synthesis and Their Versatile Applications

Novel Bismuth Nanotubes

Influence of antimony dopant in some physical properties of MnBi1-xSbx thin films

Ambipolar two-dimensional bismuth nanostructures in junction with bismuth oxychloride

Optical properties of bismuth nanostructures towards the ultrathin film regime

Topological Weyl semimetals in $\rm Bi$$_{1-x}$$\rm Sb$$_{x}$ alloys

Flux Free Single Crystal Growth and Detailed Physical Property Characterization of Bi1-xSbx (x = 0.05, 0.1 and 0.15) Topological Insulator

Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn0.6Bi2 and (La0.5RE0.5)Zn0.6Bi2 (RE = Pr or Nd)

Sb concentration dependent structural and resistive properties of polycrystalline Bi-Sb alloys

Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals

Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn 0.6 Bi 2 and (La 0.5 RE 0.5 )Zn 0.6 Bi 2 (RE = Pr or Nd)