Abstract:Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ∼10<sup>4</sup> (comparable to that of bare drums at room temperature) and present our ability to detect ∼10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, so that we can perform optomechanical sideband pumping with a fairly good coupling strength <i>G</i> and demonstrate mechanical parametric amplification. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c01477?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01477</a>.Nanofabrication, setup and modeling of microwave reflectometry, the electrostatic force on frequency modulation, the nonlinear fit Duffing parameter, and the theory of nondegenerate mechanical parametric amplification (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c01477/suppl_file/nl1c01477_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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