Abstract:Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $\mu$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

Enhanced coherence of all-nitride superconducting qubits epitaxially grown on silicon substrate

Systematic improvements in transmon qubit coherence enabled by niobium surface encapsulation

Improved Coherence in Optically-Defined Niobium Trilayer Junction Qubits

Improved coherence in optically defined niobium trilayer-junction qubits

Development of TiN/AlN-based superconducting qubit components

Superconducting qubits on silicon substrates for quantum device integration

Microscopic relaxation channels in materials for superconducting qubits

Storing quantum information for 30 seconds in a nanoelectronic device

New material platform for superconducting transmon qubits with coherence times exceeding 0.3 milliseconds

Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Multi-modal electron microscopy study on decoherence sources and their stability in Nb based superconducting qubit

Surpassing millisecond coherence times in on-chip superconducting quantum memories by optimizing materials, processes, and circuit design

Measurement of Quality Factor and Losses in Superconducting Microwave Resonator Integrated with Nbn/Aln/Nbn Qubit Circuit

High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing

Reducing two-level systems dissipations in 3D superconducting niobium resonators by atomic layer deposition and high temperature heat treatment

Reducing two-level system dissipations in 3D superconducting Niobium resonators by atomic layer deposition and high temperature heat treatment

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing

Structure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits

Progress in Superconducting Qubits from the Perspective of Coherence and Readout