Controlling Domain-Wall Nucleation in Ta/CoFeB/MgO Nanomagnets via Local Ga+ Ion Irradiation

Simon Mendisch,Fabrizio Riente,Valentin Ahrens,Luca Gnoli,Michael Haider,Matthias Opel,Martina Kiechle,Massimo Ruo Roch,Markus Becherer

DOI: https://doi.org/10.1103/PhysRevApplied.16.014039

2021-02-15

Abstract:Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irradiation is investigated as an effective means to control domain-wall nucleation in Ta/CoFeB/MgO nanostructures. We show that analogously to He+ irradiation, it is not only possible to reduce the perpendicular magnetic anisotropy but also to increase it significantly, enabling new, bidirectional manipulation schemes. First, the irradiation effects are assessed on film level, sketching an overview of the dose-dependent changes in the magnetic energy landscape. Subsequent time-domain nucleation characteristics of irradiated nanostructures reveal substantial increases in the anisotropy fields but surprisingly small effects on the measured energy barriers, indicating shrinking nucleation volumes. Spatial control of the domain wall nucleation point is achieved by employing focused irradiation of pre-irradiated magnets, with the diameter of the introduced circular defect controlling the coercivity. Special attention is given to the nucleation mechanisms, changing from a Stoner-Wohlfarth particle's coherent rotation to depinning from an anisotropy gradient. Dynamic micromagnetic simulations and related measurements are used in addition to model and analyze this depinning-dominated magnetization reversal.

Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

### Problems the paper attempts to solve

This paper aims to solve the problem of how to control the domain wall (DW) nucleation process in Ta/CoFeB/MgO nanomagnets through local Ga⁺ ion irradiation. Specifically, the research focuses on the following aspects:

1. **Precise control of domain wall nucleation**: In emerging spintronics technologies, such as random - access memory, storage - class memory, domain - wall - logic concepts, and nanomagnetic logic, comprehensive control of the magnetic energy landscape is crucial. This paper explores the use of focused Ga⁺ ion irradiation as an effective means to control domain wall nucleation.

2. **Bidirectional manipulation scheme**: Research shows that, similar to He⁺ ion irradiation, it can not only reduce the perpendicular magnetic anisotropy (PMA) but also significantly increase PMA, thus achieving a new bidirectional manipulation scheme.

3. **Control in time and space**: Evaluate the changes in the magnetic energy landscape through dose - dependent changes and study the time - domain nucleation characteristics of irradiated nanostructures. Particular attention is paid to how to achieve spatial control of domain - wall nucleation points by pre - irradiating magnets with focused irradiation.

4. **Mechanism analysis**: The research studies the transition of the nucleation mechanism from the coherent rotation of Stoner - Wohlfarth particles to the unpinning from the anisotropy gradient, and conducts modeling and analysis in combination with dynamic micromagnetic simulations and related measurements.

5. **Application prospects**: Through these studies, more precise control methods can be provided for future spintronics devices, especially in logic applications where the magnetic energy landscape needs to be precisely customized for nucleating, propagating, and pinning/unpinning domain walls.

### Summary of key issues

- **Core of the problem**: How to precisely control the domain - wall nucleation process in Ta/CoFeB/MgO nanomagnets through local Ga⁺ ion irradiation.
- **Solution**: Through experiments and simulations, it has been verified that Ga⁺ ion irradiation can precisely regulate domain - wall nucleation in time and space, and the physical mechanism behind it has been revealed.
- **Application value**: These research results are helpful for developing more efficient spintronics devices, especially providing new possibilities in logic applications.

### Formula representation

The main formulas involved in the paper include:

1. **Sharrock formula**:
\[
H_{\text{nuc}} = H_{s0} \left\{ 1 - \left[ \frac{k_B T}{E_0} \ln \left( \frac{f_0 t_p}{\ln(2)} \right) \right]^{1/2} \right\}
\]
where:
- \( H_{s0} \) is the switching field at 0K,
- \( f_0 \) is the attempt frequency (approximately \( 1\times 10^9 \) Hz),
- \( E_0 \) is the energy barrier without an external field.

2. **Néel–Brown theory**:
\[
\tau = f_0^{-1} \exp \left[ \frac{M_s V_a}{k_B T (H_d - H)} \right]
\]
where:
- \( V_a \) is the activation volume,
- \( H_d \) is the unpinning field at 0K.

These formulas are used to explain the magnetization reversal mechanisms at different time scales and help understand whether the domain - wall nucleation is a process dominated by coherent rotation or unpinning.