An evaluation of prostaglandin E2 administered intrarectally to induce labour.

J. Dommisse,D. Davey,B. Martin,M. Cohen

1981-05-30

Abstract:Prostaglandin E2 (PGE) 4 mg administered as an intrarectal suppository failed to induce labour in 70% of patients with a favourable cervical score. This may indicate that intravaginally administered PGE, which is effective in inducing labour in 70% of patients, acts at least in part directly on the cervix.

What problem does this paper attempt to address?

Spontaneous Raman scattering in ultrasmall silicon waveguides

Jerry I Dadap,Richard L Espinola,Richard M Osgood Jr,Sharee J McNab,Yurii A Vlasov

DOI: https://doi.org/10.1364/ol.29.002755

2004-12-01

Abstract:We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-microm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
Observations of Spontaneous Raman Scattering in Silicon Slow-light Photonic Crystal Waveguides

J. F. McMillan,M. Yu,D. L. Kwong,C. W. Wong

DOI: https://doi.org/10.48550/arXiv.0807.3388

2008-07-22

Optics

Abstract:We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in hexagonal lattice photonic crystal silicon membranes. By utilizing the Bragg gap edge dispersion of the TM-like mode for pump enhancement and the TE-like fundamental mode-onset for Stokes enhancement, the Stokes emission was observed to increase by up to five times in the region of slow group velocity. The results show explicit nonlinear enhancement in a silicon photonic crystal slow-light waveguide device.
Raman Amplification in Silicon-Nanocrystal Waveguides

Ivan D. Rukhlenko,Vineetha Kalavally

DOI: https://doi.org/10.1109/jlt.2013.2291009

IF: 4.7

2014-01-01

Journal of Lightwave Technology

Abstract:The strength of Raman interaction between optical fields propagating through a silicon-nanocrystal waveguide is known to significantly differ from that in bulk silicon and silicon-on-insulator waveguides. Here we present the first theoretical study of continuous-wave Raman amplification in silicon-nanocrystal waveguides with improved mode confinement. By calculating numerically the mode-overlap factors and effective refractive indices of the pump and Stokes fields, we analyze how the maximal Stokes intensity and the optimal waveguide length depend on the cross-section parameters of the composite, density of silicon nanocrystals, and input conditions. In particular, we demonstrate that the maximal Stokes intensity peaks at certain waveguide height and volume fraction of silicon nanocrystals for fixed input intensities, and at certain waveguide width for fixed input powers. These features enable simple performance optimization of Raman amplifiers and lasers based on silicon nanocrystals.

engineering, electrical & electronic,optics,telecommunications
Temperature-dependent Raman Scattering of Silicon Nanowires.

ZX Su,J Sha,GW Pan,JX Liu,DR Yang,C Dickinson,WZ Zhou

DOI: https://doi.org/10.1021/jp055869o

IF: 3.466

2005-01-01

The Journal of Physical Chemistry B

Abstract:Silicon nanowires with narrowly distributed diameters of 20-30 nm have been fabricated by chemical vapor deposition on an anodized aluminum oxide (AAO) substrate. The first-order and second-order Raman scatterings of the silicon nanowires have been studied in a temperature range from 123 to 633 K. Both of the first-order and second-order Raman peaks were found to shift and broaden with increasing temperature. The experimental results were analyzed by combining the phonon confinement effect, anharmonic phonon processes and lattice stress effect. It was found that the intensities of the first-order and second-order Raman bands have different dependences on temperature. The value of relative intensities I(2TA)int/I(2TO)int for silicon nanowires was found to be larger than that of bulk silicon, and increase with rising measurement temperature. We ascribe this phenomenon to the participation of phonons with a large wave vector value of Raman scattering caused by both the phonon confinement effect and the temperature effect.
Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Xiaoping Liu,Jeffrey B. Driscoll,Jerry I. Dadap,Richard M. Osgood,Solomon Assefa,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1364/oe.19.007778

IF: 3.8

2011-01-01

Optics Express

Abstract:We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm. At high input power, self-phase modulation is clearly demonstrated by the development of power-dependant spectral fringes. Asymmetry and blue-shift in the appearance of the spectral fringes at 1775 nm versus 2200 nm is further shown to originate from a strong reduction in the intra-pulse density of two-photon absorption-generated free carriers and the associated free-carrier dispersion. Analysis of experimental data and comparison with numerical simulations illustrates that the two-photon absorption coefficient β(TPA) obtained here from nanophotonic wire measurements is in reasonable agreement with prior measurements of bulk silicon crystals, and that bulk Si values of the nonlinear refractive index n(2) can be confidently incorporated in the modeling of pulse propagation in deeply-scaled waveguide structures.
Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

K.W. Adu,Q. Xiong,H.R. Gutierrez,G. Chen,P.C. Eklund

DOI: https://doi.org/10.1007/s00339-006-3716-8

2006-01-01

Applied Physics A

Abstract:Raman scattering is shown to be an effective probe of optical and surface optical phonons in highly crystalline semiconducting nanowires (SNWs). We show that the confinement model of Richter et al. well describes the nanowire diameter dependence of the asymmetric broadening of the one-phonon band in Si nanowires observed at ∼520 cm-1. We also show that the use of high laser flux (∼0.1 mW/μm2) leads to a second mechanism that can asymmetrically broaden the 520 cm-1 Raman band. This broadening has nothing to do with confinement, and can qualitatively be understood in terms of inhomogeneous laser heating. A model is presented that supports this explanation. The production of SNWs via the vapor–liquid–solid growth mechanism leads, in many cases, to an instability in the nanowire diameter or cross-sectional area. In the second part of this review, we show that this instability activates the surface optical (SO) phonon Raman scattering. Examples of this phenomenon are shown for GaP and ZnS nanowires. The former and latter have, respectively, cylindrical and rectangular cross sections. We show that the cross-sectional shape of the nanowire is important for a quantitative analysis of these SO modes.
Photocurrent effect in reverse-biased p-n silicon waveguides in communication bands

Yong Zhao,Chao Xu,Wan J. Wang,Qiang Zhou,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1088/0256-307X/28/7/074216

2011-01-01

Chinese Physics Letters

Abstract:The photocurrent effect in reverse biased p-n silicon waveguides at wavelength 1550 nm is experimentally investigated. The photocurrent, which is mainly related to surface-state absorption, defect-state absorption and/or two-photon absorption, is more than 0.08 mu A/mm under 8 V reverse biasing and 0.75 mW irradiation. The responsivity of a silicon waveguide with length of 4500 mu m achieves 0.5 mA/W. Moreover, the enhancement of the photocurrent effect under the electric field is discussed.
Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Ying Chang,Saisai He,Mingyuan Sun,Aixia Xiao,Jiaxin Zhao,Lulu Ma,Wei Qiu

DOI: https://doi.org/10.1155/2021/2860007

2021-12-31

Journal of Spectroscopy

Abstract:Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

spectroscopy,biochemical research methods
Generalized Granuloma Annulare Treated with Monthly Rifampicin, Ofloxacin, and Minocycline Combination Therapy

S. Garg,S. Baveja

DOI: https://doi.org/10.4103/0019-5154.110828

2013-05-01

Indian Journal of Dermatology

Abstract:Granuloma annulare (GA) is a disease characterized by granulomatous inflammation of the dermis. A variant form of the disease, generalized granuloma annulare (GGA), can be observed in 15% of affected patients. Localized GA is likely to resolve spontaneously within months or a few years, whereas GGA can persist for decades. There are various therapies for treating GGA. Monthly combination therapy of rifampicin 600 mg, ofloxacin 400 mg, and minocycline 100 mg (ROM) is used for treating paucibacillary leprosy which shares both clinical and histopathologic similarities with GA. Therefore, we decided to evaluate the possible efficacy of monthly ROM in a patient with GGA.
Continuous-wave Raman amplification in silicon waveguides: beyond the undepleted pump approximation.

I. D. Rukhlenko,C. Dissanayake,G. Agrawal,M. Premaratne

DOI: https://doi.org/10.1364/OL.34.000536

IF: 3.6

2009-02-15

Optics Letters

Abstract:We present approximate analytical expressions describing nonlinear interaction of two optical waves copropagating inside a silicon waveguide in the presence of linear losses, stimulated Raman scattering, and free-carrier absorption. Our approach avoids the undepleted-pump approximation, which we show to be inadequate to describe accurately the Raman-gain process. Based on our calculations, we propose a new generalized definition for the effective length and show that it provides better insight into the impact of nonlinear absorption on Raman amplification in silicon waveguides.

Engineering,Medicine,Physics
Variation of Raman Feature on Excitation Wavelength in Silicon Nanowires

SL Zhang,W Ding,Y Yan,J Qu,B Li,LY Li,KT Yue,DP Yu

DOI: https://doi.org/10.1063/1.1527228

IF: 4

2002-01-01

Applied Physics Letters

Abstract:A variation of Raman feature on excitation wavelength in silicon nanowires was observed. Based on the quantum size confinement effect, the resonant Raman scattering phenomenon and the existence of different sizes of Si grains in the samples, a plausible mechanism to interpret the novel feature was proposed and supported by experimental facts.
Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Tao Chu,Masayoshi Yamada,Joerg Donecker,Matthias Rossberg,Volker Alex,Helge Riemann

DOI: https://doi.org/10.1016/S0921-5107(01)00986-2

2002-01-01

Abstract:Birefringence measurements, using a scanning infrared polariscope (SIRP) with high sensitivity, have been carried out in as-grown dislocation-free silicon single crystal ingots. A small amount of birefringence due to 〈110〉 optical anisotropy, which is predicted not by the classical optics theory but by the Lorentz's spatial dispersion theory, is observed in the θ–Z optical configuration, for which a probing polarized light is introduced from the as-grown cylindrical ingot surface and then the polarization of the light transmitted through the opposite surface is analyzed. On the other hand, in the R–θ optical configuration, for which the probing polarized light is introduced along the 〈001〉 crystal growth direction from the (001) sliced and polished surface and then the polarization of the light transmitted through the opposite (001) surface is analyzed, the birefringence is still observed although it is extremely small. It is found that this 〈001〉 optical anisotropy is not constant over the (001) cross-section of the ingot but consists of two different components, i.e. a symmetric component distributed over the whole sample, probably caused by point defects, and an asymmetric component distributed randomly near the peripheral region, related to dents and chips on the as-grown cylindrical surface.
Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Rp Wang,Gw Zhou,Yl Liu,Sh Pan,Hz Zhang,Dp Yu,Z Zhang

DOI: https://doi.org/10.1103/physrevb.61.16827

IF: 3.7

2000-01-01

Physical Review B

Abstract:Raman-scattering spectra of silicon nanowires (SiNW's) with different diameters were obtained at room temperature. The Raman peaks of SiNW's were found to shift and to broaden with decreasing diameter of the SiNW's. In addition to the fundamental phonon modes, overtone and combination modes were also observed and identified according to the selection rules of overtone and combination bands. A phonon confinement model was used to explain the experimental results of observed phonon modes. The results show that the confinement effect becomes more obvious when the SiNW diameter is less than 22 nm. The present results should be of benefit to the applications of SiNW's.
Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Junjie Niu,Jian Sha,Deren Yang

DOI: https://doi.org/10.1016/j.scriptamat.2006.03.060

IF: 6.302

2006-01-01

Scripta Materialia

Abstract:Temperature dependence of the first-order Raman scattering in silicon nanowires was studied using an amended phonon confinement model. The experimental band position and linewidth both showed a better agreement with the calculated data if the temperature effect was considered. Furthermore, a slight improvement in crystal quality was observed. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Low frequency Raman gain measurements using chirped pulses

A Dogariu,D Hagan

DOI: https://doi.org/10.1364/oe.1.000073

1997-08-04

Abstract:Two-beam coupling, attributed to Raman gain, is observed in dielectrics using chirped femtosecond pulses. A time resolved pump-probe geometry is used to vary the frequency difference between pulses in the terahertz frequency band. Stimulated Raman scattering couples the pulses transferring energy from the higher to the lower frequency beam, resulting in a dispersion shaped curve as a function of the temporal delay, dependent on the product of the pump and probe irradiances. The observed signal gives the Raman gain in SiO2 and PbF2 for detunings up to 10 THz (approximately 300 cm -1 ) using mm-thick samples. This method may also be sensitive to the electronic motion responsible for bound-electronic nonlinear refractive index, which could yield the optical response time of bound electrons.
Laser-Induced Fano Resonance Scattering in Silicon Nanowires

R. Gupta,Q. Xiong,C. K. Adu,U. J. Kim,P. C. Eklund

DOI: https://doi.org/10.1021/nl0341133

IF: 10.8

2003-01-01

Nano Letters

Abstract:We have studied the impact of excitation laser power density on the Raman spectrum of small-diameter (5-15 nm) silicon nanowires. At low power densities, a Lorentzian line is observed at 520 cm(-1), the same value as that of the zone center LO (TO) phonon in bulk silicon. With increasing laser illumination, the Raman band downshifts and asymmetrically broadens on the low-frequency side. Our results contradict the traditionally accepted notion that a downshifted and asymmetrically broadened line in Si nanowires is due to quantum confinement effects. Rather, we suggest that the downshifting can be due to a laser heating effect of the nanowire and that the asymmetric line shape is due to a Fano interference between scattering from the k = 0 optic phonon and electronic continuum scattering from laser-induced electrons in the conduction band.
Precise characterization of a silicon carbide waveguide fiber interface

Marcel Krumrein,Raphael Nold,Flavie Davidson-Marquis,Arthur Bourama,Lukas Niechziol,Timo Steidl,Ruoming Peng,Jonathan Körber,Rainer Stöhr,Nils Gross,Jurgen Smet,Jawad Ul-Hassan,Péter Udvarhelyi,Adam Gali,Florian Kaiser,Jörg Wrachtrup

2024-05-02

Abstract:Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a well defined waveguide mode can significantly enhance the photon detection efficiency. In addition, interfacing this waveguide to a classical fiber network is of similar importance to detect the photons and perform experiments. Here, we show a waveguide fiber interface in SiC. By careful measurements we determine efficiencies exceeding 93 % for the transfer of photons from SiC nanobeams to fibers. We use this interface to create a bright single photon source based on waveguide integrated V2 defects in 4H-SiC and achieve an overall photon count rate of 181 kilo-counts per second. We observe and quantify the strain induced shift of the ground state spin states and demonstrate coherent control of the electron spin with a coherence time of T2=42.5 $\rm\mu$s.

Quantum Physics,Optics
Integrated Raman Spectroscopic Sensor Based on Silicon Nanowire Waveguides

Xianxin Jiang,Longhua Tang,Jinyan Song,Mingyu Li,Jian-Jun He

DOI: https://doi.org/10.1117/12.2071446

2014-01-01

Abstract:In this article we propose a novel Raman spectroscopic sensor which employs silicon nanowire waveguides for excitation and collection of Raman signal, and an integrated micro-ring resonator as a filter. Preliminary experimental results show that the extinction ratio of the filter including the ring resonator together with the grating coupler is more than 60 dB and the total insertion loss from the laser to the detector is less than 10dB. Theoretical calculations indicate that this high stray light rejection of the filter allows the observation of Raman signal at frequency as low as 4 cm(-1). By employing the evanescent field of the silicon waveguide as excitation and collection of Raman signal, along with the integration of the filter and potentially a tunable semiconductor laser and the detector, a miniaturized Raman spectroscopic sensor can be realized on SOI platform.
Raman Spectral Study of Silicon Nanowires

BB Li,DP Yu,SL Zhang

DOI: https://doi.org/10.1103/physrevb.59.1645

1999-01-01

Abstract:Raman spectra of silicon nanowires (Si NW's) have been analyzed, and the observed Raman peaks were assigned. The typical features of the first-order Raman peaks of the optical phonons were found matching those predicted by the quantum confinement effect. However, the sizes of Si NW's, derived from the microcrystal model (MCM) of Raman spectra do not fit the usual confined size, the diameter, of the nanowires from transmission electron microscope images. Abundant structure defects can be observed in Si NW's so that the Si NW's actually consist of many smaller Si grains. The size of such Si grains was found to give a better agreement with the size derived from the Raman spectra. This indicates that MCM can be used to interpret the Raman spectrum of Si NW's as long as one takes into account the influence of defect on the confined size.
Saturation of the Raman amplification by self-phase modulation in silicon nanowaveguides

Felix Kroeger,Aleksandr Ryasnyanskiy,Alexandre Baron,Nicolas Dubreuil,Philippe Delaye,Robert Frey,Gérald Roosen,David Peyrade

DOI: https://doi.org/10.1063/1.3451466

IF: 4

2010-06-14

Applied Physics Letters

Abstract:We experimentally show that the self-phase modulation of picosecond pump pulses, induced by both the optical Kerr effect and free-carrier refraction, has a detrimental effect on the maximum on-off Raman gain achievable in silicon on insulator nanowaveguides, causing it to saturate. A simple calculation of the Raman gain coefficient from the measured broadened output pump spectra perfectly matches the saturated behavior of the amplified Raman signal observed experimentally at different input pump powers.

physics, applied

An evaluation of prostaglandin E2 administered intrarectally to induce labour.

Spontaneous Raman scattering in ultrasmall silicon waveguides

Observations of Spontaneous Raman Scattering in Silicon Slow-light Photonic Crystal Waveguides

Raman Amplification in Silicon-Nanocrystal Waveguides

Temperature-dependent Raman Scattering of Silicon Nanowires.

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

Photocurrent effect in reverse-biased p-n silicon waveguides in communication bands

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Generalized Granuloma Annulare Treated with Monthly Rifampicin, Ofloxacin, and Minocycline Combination Therapy

Continuous-wave Raman amplification in silicon waveguides: beyond the undepleted pump approximation.

Variation of Raman Feature on Excitation Wavelength in Silicon Nanowires

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Low frequency Raman gain measurements using chirped pulses

Laser-Induced Fano Resonance Scattering in Silicon Nanowires

Precise characterization of a silicon carbide waveguide fiber interface

Integrated Raman Spectroscopic Sensor Based on Silicon Nanowire Waveguides

Raman Spectral Study of Silicon Nanowires

Saturation of the Raman amplification by self-phase modulation in silicon nanowaveguides