Multi-factors-controlled ReRAM devices and their applications
Bai Sun,Guangdong Zhou,Tian Yu,Yuanzheng Chen,Feng Yang,Yong Zhao
DOI: https://doi.org/10.1039/d1tc06005h
IF: 6.4
2022-05-17
Journal of Materials Chemistry C
Abstract:Resistive random access memory (ReRAM) based on resistive switching (RS) effect is a new type of non-volatile memory device that stores information based on the reversible conversion of resistance states controlled by electrical pulse. The RRAM has many advantages such as high read/write speed, high storage density, and low power consumption. In particular, many recent studies have found that the conversion of resistance states in some RRAMs can be controlled by extra-factors except electrical pulse, such as light, magnetic field, mechanical force, moisture, temperature, acid-base (pH), and so on. The multi-factors-controlled ReRAM devices are expected to manufacture multistate memory for information processing, special sensors and neuromorphic applications, thus it can be expected to use in multifunctional devices with wider applications. Therefore, the development of multi-factors-controlled ReRAM devices is of great significance. In this review, we discussed the research progress, current problems, and future development trends for the multi-factors-controlled ReRAM devices for information processing, neural sensing and neuromorphic applications in artificial intelligence.
materials science, multidisciplinary,physics, applied