Substituted (P, As, Sb, S and Se) of two dimensional Bi2Te3 monolayer under stress at high temperature: achieving high thermoelectric performance

Ting Li,Jie Pu,Tianwen Yu,Ziyu Hu,Xiaohong Shao
DOI: https://doi.org/10.1039/d3nj01566a
IF: 3.3
2023-06-07
New Journal of Chemistry
Abstract:In order to study the characteristics and laws of the extensive application of superior thermoelectric properties near room temperature in thermoelectric devices, the element substitution in two-dimensional (2D) Bi2Te3 based materials was studied by using density functional theory and semi classical Boltzmann theory. It worth noting that replacing the VA family (P, As, Sb) of Bi2Te3 with BiPTe3, BiSbTe3, and BiAsTe3 alloys results in lower lattice thermal conductivity (k =0.36 W/mK, 0.30 W/mK, and 0.34 W/mK), which enhances the merit figure of ZT value from 0.61 of pure Bi2Te3 system up to 1.01, 1.08 and 1.10 at 300K, respectively. Meanwhile, the compressive strain effect improves the TE performance of n-type BiAsTe3 single-layer alloy. The ZT value of n-type structure can reach 1.904 at 800K. Our results indicate that the group-VA (X=P, As, Sb) substituted into Bi2Te3 with BiPTe3, BiSbTe3 and BiAsTe3 alloys are promising candidates for thermoelectric applications near room temperature, and compressive strain can effectively improve the ZT value of n-type structure, which show that its application ranges widely used in thermoelectric devices.
chemistry, multidisciplinary
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