Abstract:The semiconductor industry is continuing the scaling down of both device and on-chip interconnect features, for performance and economic reasons. This trend has implications for the design of guard ring structures, i.e. metallic non-functional structures in the back-end-of-line (BEoL) stack designed to be efficient to stop microcracks. In this work, we present a sample design for an in situ experiment to study mechanical degradation and failure mechanisms of crack stop structures in the BEoL stack, to ensure the mechanical robustness of microchips for future technology nodes. Additional finite element method (FEM) simulations provide supplementary understanding of the crack kinetics. To examine the effects of mechanical loading on crack stop elements of the BEoL stack, a novel sample geometry for an in situ fatigue experiment using x-ray microscopy was developed. The x-ray microscope (ZEISS Xradia 800 Ultra) enables high-resolution imaging of the 3D-patterned sample structures and defects such as microcracks. The tailored sample geometry allows the application of a tensile load to a BEoL specimen by a lever mechanism. The feasibility of the sample design is shown by mode-I loading of a pure interconnect sample. Post-mortem analysis by scanning electron microscopy (SEM), confirming planar microcrack propagation from the notch through the dielectric layer with small deflections of the crack path near cone shaped copper vias. FEM simulations focusing on the stress-strain fields around a crack tip indicate the beginning of copper plasticity as major mechanism starting the redirection of cracks due to resulting material compression in front of the obstacle.

Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction

In Situ Measurement of Stress Evolution in Sn-based Solder Joint under Electromigration Based on X-ray Diffraction Technique

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

In situ nanomechanical measurement of Cu nanowires

Residual Stress Assessment of Interconnects by Slot Milling with Fib and Geometric Phase Analysis

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Investigation of Stress Evolution Induced by Electromigration in Sn-Ag-Cu Solder Joints Based on an X-Ray Diffraction Technique

Microstructure and Residual Stress Gradient Evolution Mechanism of Electronic Copper Strip for Lead Frame

Quasi In Situ Study on the Slipping Behavior and Residual Stress of Copper Strip

Investigation of Stress Evolution at the Interface of Cu/Sn3.0Ag0.5Cu/Cu Solder Joint during Electromigration

In-situ X-ray Microscopy of Crack-Propagation to Study Fracture Mechanics of On-Chip Interconnect Structures

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Residual thermo-creep deformation of copper interconnects by phase-shifting SEM Moiré method

The effect of stress migration on electromigration in dual damascene copper interconnects

Measurement of Thermal Stress by X-ray Nano-Diffraction in (111)-Oriented Nanotwinned Cu Bumps for Cu/SiO2 Hybrid Joints

Atomic-Scale Investigation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper through In Situ HRTEM

Electromigration behavior of 60 nm dual damascene Cu interconnects

Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line

Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

Microcracking in On-Chip Interconnect Stacks: FEM Simulation and Concept for Fatigue Test

Electromigration in Cu-Cored Sn-3.5Ag-0.7Cu Solder Interconnects under Current Stressing